Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2013-02-28 09:25
Characteristics of double quantum dot Si single-electron transisor caused by the number change of electrons in quantum dot
Takafumi Uchida, Hiroto Takenaka, Isamu Yoshioka, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2012-138 SDM2012-167
Abstract (in Japanese) (See Japanese page) 
(in English) A double quantum-dot (DQD) device is expected as a key device for quantum information processing as well as a single-electron transfer device. For this application, the control of capacitive coupling between the quantum dots (QDs) is important. We fabricated a multigate Si-DQD device and found that capacitive coupling of the Si-DQD is tunable by the number of electrons in the two QDs. The reason is attributed to the effective size change of QDs due to the change in number of electrons in the QDs. In addition, we find that capacitive coupling changes abnormal way by the change of the number of electrons in QDs. This might be caused by the change of effective configuration of QDs due to the change of distribution of electron wave function in QDs.
Keyword (in Japanese) (See Japanese page) 
(in English) Single electron / Double quantum dot / Capacitive coupling / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 446, SDM2012-167, pp. 53-58, Feb. 2013.
Paper # SDM2012-167 
Date of Issue 2013-02-20 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-138 SDM2012-167

Conference Information
Committee SDM ED  
Conference Date 2013-02-27 - 2013-02-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To SDM 
Conference Code 2013-02-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characteristics of double quantum dot Si single-electron transisor caused by the number change of electrons in quantum dot 
Sub Title (in English)  
Keyword(1) Single electron  
Keyword(2) Double quantum dot  
Keyword(3) Capacitive coupling  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takafumi Uchida  
1st Author's Affiliation Hokkaido Univ (Hokkaido Univ)
2nd Author's Name Hiroto Takenaka  
2nd Author's Affiliation Hokkaido Univ (Hokkaido Univ)
3rd Author's Name Isamu Yoshioka  
3rd Author's Affiliation Hokkaido Univ (Hokkaido Univ)
4th Author's Name Masashi Arita  
4th Author's Affiliation Hokkaido Univ (Hokkaido Univ)
5th Author's Name Akira Fujiwara  
5th Author's Affiliation NTT Basic Research Laboratories, NTT Corporation (NTT)
6th Author's Name Yasuo Takahashi  
6th Author's Affiliation Hokkaido Univ (Hokkaido Univ)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2013-02-28 09:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2012-138, SDM2012-167 
Volume (vol) vol.112 
Number (no) no.445(ED), no.446(SDM) 
Page pp.53-58 
#Pages 6 
Date of Issue 2013-02-20 (ED, SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan