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| Presentation | 2013-03-08 15:50 Thermally assisted switching on magnetic tunnel junctions with perpendicular magnetized TbFe memory layer Yuki Fujisawa, Daiki Yoshikawa, Takeshi Kato, Satoshi Iwata (Nagoya Univ.), Shigeru Tsunashima (NISRI)  MR2012-50 Link to ES Tech. Rep. Archives: MR2012-50 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Perpendicular magnetized [Co/Pd] / MgO / TbFe tunnel junctions whose memory layer, TbFe, exhibits large perpendicular anisotropy and low Curie temperature were fabricated, and their magneto resistance (MR) properties and thermally assisted magnetization switching utilizing Joule heat generated by a current pulse through the junction were confirmed. The [Co/Pd] / MgO / TbFe junction with a barrier thickness of 1.4 nm exhibited an areal resistance of 342 Ωμm2 and an MR ratio of 9 % at a low bias voltage of 40 mV. The coercivity of TbFe memory layer was more than 1.5 kOe at room temperature, however the magnetization of the TbFe switched at an external field of 100 Oe when the current pulse with a pulse width 100 msec was applied through the junction, which results from Joule heat generated by the current pulse. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Thermally assisted switching / MTJ / RE-TM / TbFe / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, March 2013. | |
| Paper # | ||
| Date of Issue | 2013-03-01 (MR) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | MR2012-50 Link to ES Tech. Rep. Archives: MR2012-50 |
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| Conference Information | |
| Committee | MRIS ITE-MMS |
| Conference Date | 2013-03-08 - 2013-03-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Optical recording, etc. |
| Paper Information | |
| Registration To | MRIS |
| Conference Code | 2013-03-MR-MMS |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Thermally assisted switching on magnetic tunnel junctions with perpendicular magnetized TbFe memory layer |
| Sub Title (in English) | |
| Keyword(1) | Thermally assisted switching |
| Keyword(2) | MTJ |
| Keyword(3) | RE-TM |
| Keyword(4) | TbFe |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Yuki Fujisawa |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Daiki Yoshikawa |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Takeshi Kato |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Satoshi Iwata |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 5th Author's Name | Shigeru Tsunashima |
| 5th Author's Affiliation | Nagoya Industrial Science Research Institute (NISRI) |
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| Speaker | Author-1 |
| Date Time | 2013-03-08 15:50:00 |
| Presentation Time | 25 minutes |
| Registration for | MRIS |
| Paper # | MR2012-50 |
| Volume (vol) | vol.112 |
| Number (no) | no.452 |
| Page | pp.33-37 |
| #Pages | 5 |
| Date of Issue | 2013-03-01 (MR) |
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