Paper Abstract and Keywords |
Presentation |
2013-04-11 11:40
[Invited Talk]
Filament Scaling Forming Technique and Level-Verify-Write Scheme with Endurance Over 10 million Cycles in ReRAM Akifumi Kawahara, Ken Kawai, Yuuichirou Ikeda, Yoshikazu Katoh, Ryotaro Azuma, Yuhei Yoshimoto, Kouhei Tanabe, Zhiqiang Wei, Takeki Ninomiya, Koji Katayama, Shunsaku Muraoka, Atsushi Himeno, Kazuhiko Shimakawa, Takeshi Takagi, Kunitoshi Aono (Panasonic) ICD2013-4 Link to ES Tech. Rep. Archives: ICD2013-4 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Endurance characteristics over 10 million cycles almost 10 times higher as existing, and the small filament for leading edge process, are realized in 1T1R ReRAM array. A 2-step forming circuit with self-consistent and current-limiting schemes, and a level-verify circuit with verify algorithm for transient state recovery and adaptive write pulse generation, are developed in a 110nm 256Kb test chip. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ReRAM / 1T1R / Filament / 2-step forming / Level-verify / Endurance / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 1, ICD2013-4, pp. 15-20, April 2013. |
Paper # |
ICD2013-4 |
Date of Issue |
2013-04-04 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ICD2013-4 Link to ES Tech. Rep. Archives: ICD2013-4 |
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