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Paper Abstract and Keywords
Presentation 2013-04-11 14:45
[Invited Lecture] Fabrication of a Nonvolatile TCAM Chip Based on 4T-2MTJ Cell Structure
Shoun Matsunaga (Tohoku Univ.), Sadahiko Miura, Hiroaki Honjo (NEC), Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.) ICD2013-7
Abstract (in Japanese) (See Japanese page) 
(in English) Higher density and lower standby power are demanded in ternary content-addressable memory (TCAM), that realizes huge number of information retrieval at a time with its fully parallel manner. In this paper, we propose and demonstrate a four-MOS-transistor/two-MTJ-device (4T-2MTJ) cell circuit for a standby-power-free and high-density fully parallel nonvolatile TCAM. By optimally merging a nonvolatile storage function and a comparison logic function into the TCAM cell circuit with nonvolatile logic-in-memory structure, the transistor counts required in the cell circuit become minimized. As a result, the cell size becomes 3.14 $\mu m^2$ under a 90-nm CMOS and a 100-nm MTJ technologies.
Keyword (in Japanese) (See Japanese page) 
(in English) Nonvolatile / spintronics / standby power / fully parallel / associative memory / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 1, ICD2013-7, pp. 33-38, April 2013.
Paper # ICD2013-7 
Date of Issue 2013-04-04 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2013-04-11 - 2013-04-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Advanced Industrial Science and Technology (AIST) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2013-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of a Nonvolatile TCAM Chip Based on 4T-2MTJ Cell Structure 
Sub Title (in English)  
Keyword(1) Nonvolatile  
Keyword(2) spintronics  
Keyword(3) standby power  
Keyword(4) fully parallel  
Keyword(5) associative memory  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Shoun Matsunaga  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Sadahiko Miura  
2nd Author's Affiliation NEC Corporation (NEC)
3rd Author's Name Hiroaki Honjo  
3rd Author's Affiliation NEC Corporation (NEC)
4th Author's Name Keizo Kinoshita  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Shoji Ikeda  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Tetsuo Endoh  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Hideo Ohno  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
8th Author's Name Takahiro Hanyu  
8th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2013-04-11 14:45:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2013-7 
Volume (vol) vol.113 
Number (no) no.1 
Page pp.33-38 
#Pages 6 
Date of Issue 2013-04-04 (ICD) 

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