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Paper Abstract and Keywords
Presentation 2013-04-12 16:20
NMOS-Inside 6T SRAM Layout Reducing Neutron-Induced Multiple Cell Upsets
Shusuke Yoshimoto, Shintaro Izumi, Hiroshi Kawaguchi, Masahiko Yoshimoto (Kobe Univ.) ICD2013-23
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents a proposed NMOS-centered 6T SRAM cell layout that reduces a neutron-induced multiple-cell-upset (MCU) SER on a same wordline. We implemented an 1-Mb SRAM macro in a 65-nm CMOS process and irradiated neutrons as a neutron-accelerated test to evaluate the MCU SER. The proposed 6T SRAM macro improves the horizontal MCU SER by 67–98% compared with a general macro that has PMOS-centered 6T SRAM cells.
Keyword (in Japanese) (See Japanese page) 
(in English) SRAM / Soft error / Multiple cell upset / neutron particle / twin well / triple well / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 1, ICD2013-23, pp. 121-126, April 2013.
Paper # ICD2013-23 
Date of Issue 2013-04-04 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2013-23

Conference Information
Committee ICD  
Conference Date 2013-04-11 - 2013-04-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Advanced Industrial Science and Technology (AIST) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2013-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) NMOS-Inside 6T SRAM Layout Reducing Neutron-Induced Multiple Cell Upsets 
Sub Title (in English)  
Keyword(1) SRAM  
Keyword(2) Soft error  
Keyword(3) Multiple cell upset  
Keyword(4) neutron particle  
Keyword(5) twin well  
Keyword(6) triple well  
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Keyword(8)  
1st Author's Name Shusuke Yoshimoto  
1st Author's Affiliation Kobe University (Kobe Univ.)
2nd Author's Name Shintaro Izumi  
2nd Author's Affiliation Kobe University (Kobe Univ.)
3rd Author's Name Hiroshi Kawaguchi  
3rd Author's Affiliation Kobe University (Kobe Univ.)
4th Author's Name Masahiko Yoshimoto  
4th Author's Affiliation Kobe University (Kobe Univ.)
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Speaker Author-1 
Date Time 2013-04-12 16:20:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2013-23 
Volume (vol) vol.113 
Number (no) no.1 
Page pp.121-126 
#Pages 6 
Date of Issue 2013-04-04 (ICD) 

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