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Paper Abstract and Keywords
Presentation 2013-04-12 15:30
[Invited Lecture] Reduction of SRAM Standby Leakage utlizing All Digital Current Comparator
Noriaki Maeda, Shigenobu Komatsu, Masao Morimoto, Koji Tanaka, Yasumasa Tsukamoto, Koji Nii, Yasuhisa Shimazaki (Renesas Electronics) ICD2013-21
Abstract (in Japanese) (See Japanese page) 
(in English) A high-performance and low-leakage current embedded SRAM for mobile phones is proposed. The proposed SRAM has two low-voltage resume-standby modes to reduce the standby leakage. An all digital current comparator is also proposed to choose a suitable standby mode. A test chip was fabricated using 28 nm HKMG CMOS technology. The proposed 32 Kb SRAM achieves 0.41 μA standby leakage which is half of the conventional value, with 420 ps access.
Keyword 28nm, SRAM, Power Gating，Low-leakage current, Retention, Current Comparator.
Keyword (in Japanese) (See Japanese page) 
(in English) 28nm / SRAM / Power Gating / Low-leakage current / Retention / Current Comparator / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 1, ICD2013-21, pp. 109-114, April 2013.
Paper # ICD2013-21 
Date of Issue 2013-04-04 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2013-21

Conference Information
Committee ICD  
Conference Date 2013-04-11 - 2013-04-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Advanced Industrial Science and Technology (AIST) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2013-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Reduction of SRAM Standby Leakage utlizing All Digital Current Comparator 
Sub Title (in English)  
Keyword(1) 28nm  
Keyword(2) SRAM  
Keyword(3) Power Gating  
Keyword(4) Low-leakage current  
Keyword(5) Retention  
Keyword(6) Current Comparator  
Keyword(7)  
Keyword(8)  
1st Author's Name Noriaki Maeda  
1st Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
2nd Author's Name Shigenobu Komatsu  
2nd Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
3rd Author's Name Masao Morimoto  
3rd Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
4th Author's Name Koji Tanaka  
4th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
5th Author's Name Yasumasa Tsukamoto  
5th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
6th Author's Name Koji Nii  
6th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
7th Author's Name Yasuhisa Shimazaki  
7th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
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Speaker Author-1 
Date Time 2013-04-12 15:30:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2013-21 
Volume (vol) vol.113 
Number (no) no.1 
Page pp.109-114 
#Pages 6 
Date of Issue 2013-04-04 (ICD) 

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