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Paper Abstract and Keywords
Presentation 2013-05-16 14:10
Level Converter Design for Ultra Low Voltage Operation in Silicon-on-Thin-BOX MOSFET
Shohei Nakamura, Kimiyoshi Usami (Shibaura Inst. of Tech.) VLD2013-5
Abstract (in Japanese) (See Japanese page) 
(in English) Silicon on Thin Buried Oxide (SOTB) technology has an advantage that variation in threshold voltage can be more suppressed than the bulk counterpart. This enables us to aggressively reduce supply voltage of logic circuit because threshold voltage can be reduced by using SOTB. When ultra low voltage signals are converted with conventional level converter, power consumption increases due to the increase of short-circuit power within the level converter. In this paper, a level converter circuit for ultra low voltage operation using SOTB is proposed to solve this problem. We demonstrate that energy consumption of the proposed level converter can be reduced by up to 61% as compared to the conventional ones.
Keyword (in Japanese) (See Japanese page) 
(in English) ultra low voltage operation / level converter / Silicon-on-Thin-BOX MOSFET / / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 30, VLD2013-5, pp. 43-48, May 2013.
Paper # VLD2013-5 
Date of Issue 2013-05-09 (VLD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF VLD2013-5

Conference Information
Committee VLD IPSJ-SLDM  
Conference Date 2013-05-16 - 2013-05-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kitakyushu International Conference Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English) System Design, etc. 
Paper Information
Registration To VLD 
Conference Code 2013-05-VLD-SLDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Level Converter Design for Ultra Low Voltage Operation in Silicon-on-Thin-BOX MOSFET 
Sub Title (in English)  
Keyword(1) ultra low voltage operation  
Keyword(2) level converter  
Keyword(3) Silicon-on-Thin-BOX MOSFET  
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1st Author's Name Shohei Nakamura  
1st Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. of Tech.)
2nd Author's Name Kimiyoshi Usami  
2nd Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. of Tech.)
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Speaker Author-1 
Date Time 2013-05-16 14:10:00 
Presentation Time 25 minutes 
Registration for VLD 
Paper # VLD2013-5 
Volume (vol) vol.113 
Number (no) no.30 
Page pp.43-48 
#Pages 6 
Date of Issue 2013-05-09 (VLD) 

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