Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2013-05-16 16:35
Focused ion beam Ga implantation into P-doped SOI layer and its Seebeck coefficient
Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./ Research Fellow of JSPS), Masaru Shimomura, Akihiro Ishida, Hiroya Ikeda (Shizuoka Univ.) ED2013-22 CPM2013-7 SDM2013-29
Abstract (in Japanese) (See Japanese page) 
(in English) With the aim of fabricating a thermopile infrared detector using Si nanowires, we have investigated the formation of a p-type silicon-on-insulator (SOI) layer by focused ion beam (FIB) Ga implantation into a P-doped SOI layer.
In this study, the Ga-implanted SOI layers with an average Ga concentration of $3 times 10^{18}$cm$^{-3}$ and $3 times 10^{19}$cm$^{-3}$ were prepared and their Seebeck coefficients were measured.
It was found that the sign of thermoelectromotive force of the Ga-implanted SOI layer was reversed from the original P-doped SOI layer.
Therfore, the p-type SOI layer was formed by the Ga implantation.
The measured Seebeck coefficient was found not to be reproduced by the theoretically calculated value of co-doped Si.
This disagreement is thought to be due to the influence of Ga ion distribution in the implanted SOI layer.
Keyword (in Japanese) (See Japanese page) 
(in English) thermopile IR photodetector / Si nanowire / Seebeck coefficient / focused ion beam / ion implantation / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 41, SDM2013-29, pp. 33-37, May 2013.
Paper # SDM2013-29 
Date of Issue 2013-05-09 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-22 CPM2013-7 SDM2013-29

Conference Information
Committee SDM ED CPM  
Conference Date 2013-05-16 - 2013-05-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal Growth, Characterization, Device, etc (compound semiconductors, Si, SiGe, optical and electronic materials) 
Paper Information
Registration To SDM 
Conference Code 2013-05-SDM-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Focused ion beam Ga implantation into P-doped SOI layer and its Seebeck coefficient 
Sub Title (in English)  
Keyword(1) thermopile IR photodetector  
Keyword(2) Si nanowire  
Keyword(3) Seebeck coefficient  
Keyword(4) focused ion beam  
Keyword(5) ion implantation  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuhei Suzuki  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Kazutoshi Miwa  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Faiz Salleh  
3rd Author's Affiliation Shizuoka University/ Research Fellow of the Japan Society for the Promotion of Science (Shizuoka Univ./ Research Fellow of JSPS)
4th Author's Name Masaru Shimomura  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Akihiro Ishida  
5th Author's Affiliation Shizuoka University (Shizuoka Univ.)
6th Author's Name Hiroya Ikeda  
6th Author's Affiliation Shizuoka University (Shizuoka Univ.)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2013-05-16 16:35:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2013-22, CPM2013-7, SDM2013-29 
Volume (vol) vol.113 
Number (no) no.39(ED), no.40(CPM), no.41(SDM) 
Page pp.33-37 
#Pages 5 
Date of Issue 2013-05-09 (ED, CPM, SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan