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Paper Abstract and Keywords
Presentation 2013-05-17 17:00
High-Speed Response of Avalanche photodiode fabricated by 0.18um standard CMOS process
Toshiyuki Shimotori, Ryoichi Gyobu, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.) LQE2013-16
Abstract (in Japanese) (See Japanese page) 
(in English) Si avalanche photodiodes (APDs) with different electrode spacing are fabricated by 0.18 m standard CMOS process, and their frequency response are measured at 0.8 m wavelength region. The structure of the device is based on the n-MOSFET on a p-substrate, and a p-well layer is used as an optical absorption layer, and the structure to cancel the photogenerated carriers generated in the p-substrate are introduced for fast response. For the APD with the electrode spacing of 1 m, the maximum bandwidth of 7 GHz and the gain bandwidth product of 270 GHz are achieved. The capacitance of the APD is measured to be 443 fF, and the corresponding CR-limited bandwidth with 50 load is estimated to be 7.2 GHz, showing the response speed is limited by the CR-limited bandwidth. Since the PAD capacitance is included in the measured capacitance, the capacitance can be decreased and the bandwidth may be increased resultantly with decreasing the PAD size.
Keyword (in Japanese) (See Japanese page) 
(in English) Si / avalanche photodiode / standard CMOS process / high speed response / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 49, LQE2013-16, pp. 71-74, May 2013.
Paper # LQE2013-16 
Date of Issue 2013-05-10 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF LQE2013-16

Conference Information
Committee LQE LSJ  
Conference Date 2013-05-17 - 2013-05-17 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2013-05-LQE-LSJ 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-Speed Response of Avalanche photodiode fabricated by 0.18um standard CMOS process 
Sub Title (in English)  
Keyword(1) Si  
Keyword(2) avalanche photodiode  
Keyword(3) standard CMOS process  
Keyword(4) high speed response  
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1st Author's Name Toshiyuki Shimotori  
1st Author's Affiliation Kanazawa University (Kanazawa Univ.)
2nd Author's Name Ryoichi Gyobu  
2nd Author's Affiliation Kanazawa University (Kanazawa Univ.)
3rd Author's Name Takeo Maruyama  
3rd Author's Affiliation Kanazawa University (Kanazawa Univ.)
4th Author's Name Koichi Iiyama  
4th Author's Affiliation Kanazawa University (Kanazawa Univ.)
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Speaker Author-1 
Date Time 2013-05-17 17:00:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2013-16 
Volume (vol) vol.113 
Number (no) no.49 
Page pp.71-74 
#Pages 4 
Date of Issue 2013-05-10 (LQE) 

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