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Paper Abstract and Keywords
Presentation 2013-06-18 10:35
Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge
Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS) SDM2013-48
Abstract (in Japanese) (See Japanese page) 
(in English) As a alternative of Si channel, the Ge channel has been proposed and has attracted much attention because of high electron and hole mobility. However, the critical problem of Ge MOS devices is high defect densities at the interface of high-k/Ge structures. To overcome this problem, we investigated rutile TiO2 interlayer as a passivation layer. We fabricated rutile TiO2 interlayer between HfO2 and Ge, and found that the GeOx formation was effectively suppressed. Moreover the good electrical properties with EOT = 0.84 nm and small hysteresis were realized. These procedures would be one of the promising method for Ge MOS device.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge / High-k / MOS / / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-48, pp. 25-28, June 2013.
Paper # SDM2013-48 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge 
Sub Title (in English)  
Keyword(1) Ge  
Keyword(2) High-k  
Keyword(3) MOS  
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1st Author's Name Kazuyoshi Kobashi  
1st Author's Affiliation Meiji University (Meiji Univ.)
2nd Author's Name Takahiro Nagata  
2nd Author's Affiliation National Institute for material science (NIMS)
3rd Author's Name Toshihide Nabatame  
3rd Author's Affiliation National Institute for material science (NIMS)
4th Author's Name Yoshiyuki Yamashita  
4th Author's Affiliation National Institute for material science (NIMS)
5th Author's Name Atsushi Ogura  
5th Author's Affiliation Meiji University (Meiji Univ.)
6th Author's Name Toyohiro Chikyow  
6th Author's Affiliation National Institute for material science (NIMS)
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Speaker Author-1 
Date Time 2013-06-18 10:35:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-48 
Volume (vol) vol.113 
Number (no) no.87 
Page pp.25-28 
#Pages 4 
Date of Issue 2013-06-11 (SDM) 

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