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Paper Abstract and Keywords
Presentation 2013-06-18 14:35
SiC Electric-Field-Induced Resistive Nonvolatile Memory -- MIS and pn-Diode Type Memories --
Yoshiyuki Suda, Tatsumi Komatsu, Nobuo Yamaguchi, Yoshihiko Sato, Yukino Yamada, Atsushi Yamashita, Takahiro Tsukamoto (Tokyo Univ. of Agriculture and Tech.) SDM2013-57
Abstract (in Japanese) (See Japanese page) 
(in English) We have proposed two types of metal/tunneling oxide layer/SiOx electron trap layer/n-SiC/n-Si (MIS) and p-type oxide semiconductor/SiOx/n-SiC/n-Si pn-diode structured two-terminal nonvolatile memory devices. In both the memory devices, the resistances change by electric field induction depending on existence or nonexistence of trap electrons at SiOx electron trap layers. Especially, the diode-type memory devices exhibit an excellent rectifying characteristic and are promising for their application to an ultimately dense cross-point memory cell array.
Keyword (in Japanese) (See Japanese page) 
(in English) Nonvolatile Memory / Resistive Memory / RRAM / Defect States / Diode / Metal Insulator Semiconductor / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-57, pp. 67-70, June 2013.
Paper # SDM2013-57 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) SiC Electric-Field-Induced Resistive Nonvolatile Memory 
Sub Title (in English) MIS and pn-Diode Type Memories 
Keyword(1) Nonvolatile Memory  
Keyword(2) Resistive Memory  
Keyword(3) RRAM  
Keyword(4) Defect States  
Keyword(5) Diode  
Keyword(6) Metal Insulator Semiconductor  
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Keyword(8)  
1st Author's Name Yoshiyuki Suda  
1st Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agriculture and Tech.)
2nd Author's Name Tatsumi Komatsu  
2nd Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agriculture and Tech.)
3rd Author's Name Nobuo Yamaguchi  
3rd Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agriculture and Tech.)
4th Author's Name Yoshihiko Sato  
4th Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agriculture and Tech.)
5th Author's Name Yukino Yamada  
5th Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agriculture and Tech.)
6th Author's Name Atsushi Yamashita  
6th Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agriculture and Tech.)
7th Author's Name Takahiro Tsukamoto  
7th Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agriculture and Tech.)
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Speaker Author-1 
Date Time 2013-06-18 14:35:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-57 
Volume (vol) vol.113 
Number (no) no.87 
Page pp.67-70 
#Pages 4 
Date of Issue 2013-06-11 (SDM) 

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