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Paper Abstract and Keywords
Presentation 2013-06-18 09:20
Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium
Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-45
Abstract (in Japanese) (See Japanese page) 
(in English) For realizing three-dimensional Ge channel MOSFET, fabrication of good interface property of high-k/Ge structure, and uniform gate insulator film were required. In this study, we tried fabrication of GeO2 film that is expected as interface layer of high-k/Ge structure by atomic layer deposition method that is able to fabricate atomic uniform film. We used tetraethoxy-germanium (TEOG) for Ge-organic feedstock, and H2O for oxidant. By supplying TEOG and H2O on SiO2/Si substrate at 400C, we succeeded in stoichiometric GeO2 without ligand of TEOG molecular. And at more than 400 cycles, amount of GeO2 was increase linearly for number of cycle. On Ge substrate, growth rate of GeO2 film is higher than on SiO2/Si substrate.
Keyword (in Japanese) (See Japanese page) 
(in English) Three-dimensional Ge channel MOSFET / GeO2/Ge structure / Atomic layer deposition / Tetraethoxy-germanium / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 87, SDM2013-45, pp. 7-11, June 2013.
Paper # SDM2013-45 
Date of Issue 2013-06-11 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-06-18 - 2013-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2013-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium 
Sub Title (in English)  
Keyword(1) Three-dimensional Ge channel MOSFET  
Keyword(2) GeO2/Ge structure  
Keyword(3) Atomic layer deposition  
Keyword(4) Tetraethoxy-germanium  
Keyword(5)  
Keyword(6)  
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1st Author's Name Teppei Yoshida  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Kimihiko Kato  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Shigehisa Shibayama  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Mitsuo Sakashita  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Noriyuki Taoka  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Wakana Takeuchi  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
7th Author's Name Osamu Nakatsuka  
7th Author's Affiliation Nagoya University (Nagoya Univ.)
8th Author's Name Shigeaki Zaima  
8th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2013-06-18 09:20:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2013-45 
Volume (vol) vol.113 
Number (no) no.87 
Page pp.7-11 
#Pages 5 
Date of Issue 2013-06-11 (SDM) 

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