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Paper Abstract and Keywords
Presentation 2013-06-21 14:00
GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate
Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.), Toshi-kazu Suzuki (JAIST) OPE2013-10 LQE2013-20
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated metal-semiconductor-metal (MSM) photodetectors on metamorphic InAlAs layer grown on GaAs substrate. The devices were measured at the wavelength of 0.8 $mu$m region. Receiving area is 30 $mu$m x 30 $mu$m and electrode spacing is 2 $mu$m, 1 $mu$m, and 0.4 $mu$m. With the electrode spacing of 1 $mu$m, the dark current of 0.5 nA was obtained at the bias voltage of -5 V. At the wavelength of 830 nm, the responsivity of 0.11 A/W was obtained at the bias voltage of -5 V. At the wavelength of 850 nm, maximum bandwidth of 8 GHz was obtained at the bias voltage of -20 V
Keyword (in Japanese) (See Japanese page) 
(in English) Metamorphic / InAlAs / MSM photodetector / III-V compound / High frequency response / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 100, LQE2013-20, pp. 19-22, June 2013.
Paper # LQE2013-20 
Date of Issue 2013-06-14 (OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OPE2013-10 LQE2013-20

Conference Information
Committee LQE OPE  
Conference Date 2013-06-21 - 2013-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2013-06-LQE-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate 
Sub Title (in English)  
Keyword(1) Metamorphic  
Keyword(2) InAlAs  
Keyword(3) MSM photodetector  
Keyword(4) III-V compound  
Keyword(5) High frequency response  
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1st Author's Name Kazuaki Maekita  
1st Author's Affiliation Kanazawa University (Kanazawa Univ.)
2nd Author's Name Takeo Maruyama  
2nd Author's Affiliation Kanazawa University (Kanazawa Univ.)
3rd Author's Name Koichi Iiyama  
3rd Author's Affiliation Kanazawa University (Kanazawa Univ.)
4th Author's Name Toshi-kazu Suzuki  
4th Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
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Speaker Author-1 
Date Time 2013-06-21 14:00:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # OPE2013-10, LQE2013-20 
Volume (vol) vol.113 
Number (no) no.99(OPE), no.100(LQE) 
Page pp.19-22 
#Pages 4 
Date of Issue 2013-06-14 (OPE, LQE) 

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