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Paper Abstract and Keywords
Presentation 2013-08-02 10:55
Barrier Properties of Nanocrystalline HfNx Films Applicable to Through Si Via
Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2013-51
Abstract (in Japanese) (See Japanese page) 
(in English) Through silicon via (TSV) technology is important to realize 3D integration by stacking chips or wafers. We propose concept of the diffusion barrier material for Cu as a conducting material filled in a downsized via. We choose HfNx as a material that will meet the concept and examine properties of the HfNx film as a barrier in the Cu/HfNx/SiO2/Si model system. It is revealed that the HfNx film consists of an HfN phase in a nanocrystalline texture shows good properties as a barrier for TSV application satisfying the concept proposed, indicating that the concept are also valid for that of TSV technology.
Keyword (in Japanese) (See Japanese page) 
(in English) TSV / 3D integration / barrier material / HfN / nanocrystalline / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 171, CPM2013-51, pp. 63-68, Aug. 2013.
Paper # CPM2013-51 
Date of Issue 2013-07-25 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2013-08-01 - 2013-08-02 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2013-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Barrier Properties of Nanocrystalline HfNx Films Applicable to Through Si Via 
Sub Title (in English)  
Keyword(1) TSV  
Keyword(2) 3D integration  
Keyword(3) barrier material  
Keyword(4) HfN  
Keyword(5) nanocrystalline  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Masaru Sato  
1st Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
2nd Author's Name Mayumi B. Takeyama  
2nd Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
3rd Author's Name Eiji Aoyagi  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Atsushi Noya  
4th Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
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Speaker Author-1 
Date Time 2013-08-02 10:55:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # CPM2013-51 
Volume (vol) vol.113 
Number (no) no.171 
Page pp.63-68 
#Pages 6 
Date of Issue 2013-07-25 (CPM) 

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