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Paper Abstract and Keywords
Presentation 2013-08-02 11:15
Barrier properties of TaWN films in Cu/Si contact
Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Tech.) CPM2013-52
Abstract (in Japanese) (See Japanese page) 
(in English) In the Si-LSI technology, a barrier material of high thermal and structural stability is required for realization of high reliable Cu interconnects. Ternary alloy barriers are known as one of the most thermally stable barrier materials. However, they simultaneously show high resistivity. A barrier in high resistivity is less favorable because of the signal delay caused by RC time constant. We propose an application of a TaWN ternary alloy film with a low resistivity as a diffusion barrier for a Cu plug. In this study, we have examined characterization and barrier properties of the TaWN films in the Cu/Si contact. The present TaWN ternary alloy films are superior in barrier properties to that of TaN in the Cu/TaN/Si system, indicating usefulness as a candidate of the barrier for a Cu plug.
Keyword (in Japanese) (See Japanese page) 
(in English) LSI / Cu plug / TaWN alloy barrier / barrier property / low resistivity / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 171, CPM2013-52, pp. 69-72, Aug. 2013.
Paper # CPM2013-52 
Date of Issue 2013-07-25 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2013-08-01 - 2013-08-02 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2013-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Barrier properties of TaWN films in Cu/Si contact 
Sub Title (in English)  
Keyword(1) LSI  
Keyword(2) Cu plug  
Keyword(3) TaWN alloy barrier  
Keyword(4) barrier property  
Keyword(5) low resistivity  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Mayumi B. Takeyama  
1st Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
2nd Author's Name Masaru Sato  
2nd Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
3rd Author's Name Atsushi Noya  
3rd Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
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Speaker Author-1 
Date Time 2013-08-02 11:15:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # CPM2013-52 
Volume (vol) vol.113 
Number (no) no.171 
Page pp.69-72 
#Pages 4 
Date of Issue 2013-07-25 (CPM) 

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