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| Presentation | 2013-08-02 11:15 Barrier properties of TaWN films in Cu/Si contact Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Tech.)  CPM2013-52 Link to ES Tech. Rep. Archives: CPM2013-52 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In the Si-LSI technology, a barrier material of high thermal and structural stability is required for realization of high reliable Cu interconnects. Ternary alloy barriers are known as one of the most thermally stable barrier materials. However, they simultaneously show high resistivity. A barrier in high resistivity is less favorable because of the signal delay caused by RC time constant. We propose an application of a TaWN ternary alloy film with a low resistivity as a diffusion barrier for a Cu plug. In this study, we have examined characterization and barrier properties of the TaWN films in the Cu/Si contact. The present TaWN ternary alloy films are superior in barrier properties to that of TaN in the Cu/TaN/Si system, indicating usefulness as a candidate of the barrier for a Cu plug. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | LSI / Cu plug / TaWN alloy barrier / barrier property / low resistivity / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 171, CPM2013-52, pp. 69-72, Aug. 2013. | |
| Paper # | CPM2013-52 | |
| Date of Issue | 2013-07-25 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2013-52 Link to ES Tech. Rep. Archives: CPM2013-52 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2013-08-01 - 2013-08-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2013-08-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Barrier properties of TaWN films in Cu/Si contact |
| Sub Title (in English) | |
| Keyword(1) | LSI |
| Keyword(2) | Cu plug |
| Keyword(3) | TaWN alloy barrier |
| Keyword(4) | barrier property |
| Keyword(5) | low resistivity |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Mayumi B. Takeyama |
| 1st Author's Affiliation | Kitami Institute of Technology (Kitami Inst. of Tech.) |
| 2nd Author's Name | Masaru Sato |
| 2nd Author's Affiliation | Kitami Institute of Technology (Kitami Inst. of Tech.) |
| 3rd Author's Name | Atsushi Noya |
| 3rd Author's Affiliation | Kitami Institute of Technology (Kitami Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2013-08-02 11:15:00 |
| Presentation Time | 20 minutes |
| Registration for | CPM |
| Paper # | CPM2013-52 |
| Volume (vol) | vol.113 |
| Number (no) | no.171 |
| Page | pp.69-72 |
| #Pages | 4 |
| Date of Issue | 2013-07-25 (CPM) |
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