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| Presentation | 2013-08-09 11:20 Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction Wang Xin, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)  ED2013-49 Link to ES Tech. Rep. Archives: ED2013-49 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Recently, devices with three-dimensional structure such as nanowire field effect transistor (NW-FETs) and FinFETs has extensively studied. In most of these studies, the base structures such as nanowire or Fin structure were formed by using selective area growth or catalyst assisted vapor-liquid-solid (VLS) growth technique, and by using chemical vapor deposition(CVD) growth method. In this research, we paid attention to the surface reconstruction induced by In and Sb atoms on the Si substrate at the initial stage of growth of InSb films. In that process, we found that the sticking coefficient of In atoms goes to 0 above certain temperature (450℃) onto Sb-(√3×√3)or Sb-(2×1) surface reconstruction. Based on this result, we studied the trial of the selective epitaxial growth of InSb by on Si(111) using Sb-(√3×√3)surface phase. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si(111) / InSb / Reconstructed surface / Selective epitaxial growth / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 176, ED2013-49, pp. 61-65, Aug. 2013. | |
| Paper # | ED2013-49 | |
| Date of Issue | 2013-08-01 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2013-49 Link to ES Tech. Rep. Archives: ED2013-49 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2013-08-08 - 2013-08-09 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | University of Toyama |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2013-08-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction |
| Sub Title (in English) | |
| Keyword(1) | Si(111) |
| Keyword(2) | InSb |
| Keyword(3) | Reconstructed surface |
| Keyword(4) | Selective epitaxial growth |
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| 1st Author's Name | Wang Xin |
| 1st Author's Affiliation | University of Toyama (Univ. of Toyama) |
| 2nd Author's Name | Masayuki Mori |
| 2nd Author's Affiliation | University of Toyama (Univ. of Toyama) |
| 3rd Author's Name | Koichi Maezawa |
| 3rd Author's Affiliation | University of Toyama (Univ. of Toyama) |
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| Speaker | Author-1 |
| Date Time | 2013-08-09 11:20:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2013-49 |
| Volume (vol) | vol.113 |
| Number (no) | no.176 |
| Page | pp.61-65 |
| #Pages | 5 |
| Date of Issue | 2013-08-01 (ED) |
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