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Paper Abstract and Keywords
Presentation 2013-08-30 14:45
Potential-Tailored Strained InGaAs Quantum Well for Polarization-Independent 2×2 Optical Switch
Hiroki Tominaga, Joo-Hyong Noh, Taro Arakawa (Yokohama National Univ.) R2013-58 EMD2013-64 CPM2013-83 OPE2013-87 LQE2013-57
Abstract (in Japanese) (See Japanese page) 
(in English) An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) is one of the potential-tailored quantum well structures and is expected to exhibit large electrorefractive index change in a wide range of 1.55 m wavelength region and it is promising for high-performance photonic devices such as optical modulators and switches. However, the conventional FACQW shows the polarization-dependent electrorefractive index change, and its polarization-independence is desirable for optical switches. In this study, tensile-strained InGaAs/InAlAs FACQW is proposed and its polarization -independent electrorefractive index change is theoretically investigated. The influence of nonuniformity of electric field in a core layer caused by residual impurity on field-induced phase shift characteristics of a multiple FACQW is also discussed, and a multiple QW structure composed of the tensile-strained FACQW and CQW is proposed to suppress the degradation of phase-shift characteristics. In addition, polarization-independent 2×2 Mach-Zehnder optical switch with the multiple QW structure is also theoretically demonstrated.
Keyword (in Japanese) (See Japanese page) 
(in English) Quantum Well / Five-layer Asymmetric Coupled Quantum Well / Electrorefractive Index Change / Optical switch / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 189, OPE2013-87, pp. 147-152, Aug. 2013.
Paper # OPE2013-87 
Date of Issue 2013-08-22 (R, EMD, CPM, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF R2013-58 EMD2013-64 CPM2013-83 OPE2013-87 LQE2013-57

Conference Information
Committee OPE LQE CPM EMD R  
Conference Date 2013-08-29 - 2013-08-30 
Place (in Japanese) (See Japanese page) 
Place (in English) sun-refre Hakodate 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OPE 
Conference Code 2013-08-OPE-LQE-CPM-EMD-R 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Potential-Tailored Strained InGaAs Quantum Well for Polarization-Independent 2×2 Optical Switch 
Sub Title (in English)  
Keyword(1) Quantum Well  
Keyword(2) Five-layer Asymmetric Coupled Quantum Well  
Keyword(3) Electrorefractive Index Change  
Keyword(4) Optical switch  
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1st Author's Name Hiroki Tominaga  
1st Author's Affiliation Yokohama National University (Yokohama National Univ.)
2nd Author's Name Joo-Hyong Noh  
2nd Author's Affiliation Yokohama National University (Yokohama National Univ.)
3rd Author's Name Taro Arakawa  
3rd Author's Affiliation Yokohama National University (Yokohama National Univ.)
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Speaker Author-1 
Date Time 2013-08-30 14:45:00 
Presentation Time 25 minutes 
Registration for OPE 
Paper # R2013-58, EMD2013-64, CPM2013-83, OPE2013-87, LQE2013-57 
Volume (vol) vol.113 
Number (no) no.186(R), no.187(EMD), no.188(CPM), no.189(OPE), no.190(LQE) 
Page pp.147-152 
#Pages 6 
Date of Issue 2013-08-22 (R, EMD, CPM, OPE, LQE) 

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