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Paper Abstract and Keywords
Presentation 2013-11-29 13:55
Realization of high-efficiency deep-UV LED by using transparent p-AlGaN contact layer
Noritoshi Maeda, Hideki Hirayama (RIKEN) ED2013-83 CPM2013-142 LQE2013-118
Abstract (in Japanese) (See Japanese page) 
(in English) The improvement of light-extraction efficiency (LEE) is one of the most important issues for AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). For LEE improvement, we propose replacing a conventional p-GaN contact layer with a transparent p-AlGaN contact layer and introducing a highly-reflective p-type Ni/Al electrode. A p-AlGaN contact layers with Al-composition of 60-63% has higher-than-90% transparency for longer-than-275nm emission wavelengths which corresponds to sterilization wavelength. In comparison with using of conventional Ni/Au electrode, that of Ni/Al electrode on transparent p-AlGaN contact layer made LEE maximum 1.7times. And we found that high electron injection efficiency (EIE) can be maintained in spite of using p-AlGaN contact layer. As a result, we realized the maximum EQE data of 5.6 and 7% for 275 and 279 nm DUV LEDs, respectively.
Keyword (in Japanese) (See Japanese page) 
(in English) DUV LED / AlGaN / LEE / / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 331, LQE2013-118, pp. 87-90, Nov. 2013.
Paper # LQE2013-118 
Date of Issue 2013-11-21 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-83 CPM2013-142 LQE2013-118

Conference Information
Committee CPM LQE ED  
Conference Date 2013-11-28 - 2013-11-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Ｎｉｔｒide and Compound Semiconductor Devices 
Paper Information
Registration To LQE 
Conference Code 2013-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Realization of high-efficiency deep-UV LED by using transparent p-AlGaN contact layer 
Sub Title (in English)  
Keyword(1) DUV LED  
Keyword(2) AlGaN  
Keyword(3) LEE  
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1st Author's Name Noritoshi Maeda  
1st Author's Affiliation Institute of Physical and Chemical Reserch (RIKEN)
2nd Author's Name Hideki Hirayama  
2nd Author's Affiliation Institute of Physical and Chemical Reserch (RIKEN)
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Speaker Author-1 
Date Time 2013-11-29 13:55:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2013-83, CPM2013-142, LQE2013-118 
Volume (vol) vol.113 
Number (no) no.329(ED), no.330(CPM), no.331(LQE) 
Page pp.87-90 
#Pages 4 
Date of Issue 2013-11-21 (ED, CPM, LQE) 

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