|
|
| Chair |
|
Naoki Hara (Fujitsu Labs.) |
| Vice Chair |
|
Koichi Maezawa (Univ. of Toyama) |
| Secretary |
|
Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.) |
| Assistant |
|
Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST) |
|
|
|
| Chair |
|
Yasushi Takano (Shizuoka Univ.) |
| Vice Chair |
|
Satoru Noge (Numazu National College of Tech.) |
| Secretary |
|
Koji Enbutsu (NTT), Tomomasa Sato (Kanagawa Univ.) |
| Assistant |
|
Junichi Kodate (NTT), Nobuyuki Iwata (Nihon Univ.) |
|
|
|
| Chair |
|
Shinji Matsuo (NTT) |
| Vice Chair |
|
Masahiko Kondo (Osaka Univ.) |
| Secretary |
|
Yu Tanaka (Fujitsu Labs.), Hiroshi Aruga (Mitsubishi Electric) |
|
| Conference Date |
Thu, Nov 28, 2013 10:30 - 17:30
Fri, Nov 29, 2013 09:30 - 17:10 |
| Topics |
Ｎｉｔｒide and Compound Semiconductor Devices |
| Conference Place |
|
| Transportation Guide |
http://www.osaka-u.ac.jp/ja/access/accessmap.html |
Contact
Person |
Prof. Masahiko KONDOW
+81-6-6879-7765 |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Nov 28 AM
10:30 - 17:30 |
| |
10:30-10:35 |
Opening Address ( 5 min. ) |
| (1) |
10:35-11:00 |
High-Power Operation and Applications of InGaN Laser Diode  ED2013-64 CPM2013-123 LQE2013-99 |
Hiroyuki Hagino, Katsuya Samonji, Shinji Yoshida, Shinichi Takigawa, Kiyoshi Morimoto, Toshiyuki Takizawa, Hideki Kasugai, Kazuhiko Yamanaka, Takuma Katayama (Panasonic) |
| (2) |
11:00-11:25 |
Texture formation by anisotropic dry etching of m-plane GaN, and light extraction efficiency improvement of textured m-plane GaN LED ED2013-65 CPM2013-124 LQE2013-100 |
Toshiyuki Fujita, Atsushi Yamada, Akira Inoue, Ryo Kato, Toshiya Yokokawa (Panasonic) |
| (3) |
11:25-11:50 |
Study on improvement of the light extraction efficiency in 350-nm-emission UV-LED ED2013-66 CPM2013-125 LQE2013-101 |
Tsubasa Nakashima, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) |
| (4) |
11:50-12:15 |
Bow management of substrate for nitride semiconductor devices by internally focused laser processing
-- application to silicon substrate -- ED2013-67 CPM2013-126 LQE2013-102 |
Natsuko Aota, Hideo Aida, Hidetoshi Takeda (Namiki Precision Jewel) |
| |
12:15-13:30 |
Lunch Break ( 75 min. ) |
| (5) |
13:30-13:55 |
Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding ED2013-68 CPM2013-127 LQE2013-103 |
Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa (Osaka City Univ.), Manabu Arai (New Japan Radio) |
| (6) |
13:55-14:20 |
Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding ED2013-69 CPM2013-128 LQE2013-104 |
Jianbo Liang (Osaka City Univ.), Shota Nishida, Masashi Morimoto, Naoteru Shigekawa (Osaka City University) |
| (7) |
14:20-14:45 |
Investigation on the optimum MQW structure for InGaN/GaN solar cells ED2013-70 CPM2013-129 LQE2013-105 |
Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) |
| (8) |
14:45-15:10 |
Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates ED2013-71 CPM2013-130 LQE2013-106 |
Kenji Shiojima, Yuhei Kihara, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) |
| (9) |
15:10-15:35 |
AC Operation of Low-Mg-Doped p-GaN Schottky Diodes ED2013-72 CPM2013-131 LQE2013-107 |
Kenji Shiojima, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) |
| |
15:35-15:50 |
Break ( 15 min. ) |
| (10) |
15:50-16:15 |
Quantum Efficiency of p-GaN with NEA surface for high brightness electron source ED2013-73 CPM2013-132 LQE2013-108 |
Takuya Maekawa, Yoshio Honda, Hiroshi Amano, Tomohiro Nishitani (Nagoya Univ.) |
| (11) |
16:15-16:40 |
Study on C doping in GaN and AlGaN by MOVPE ED2013-74 CPM2013-133 LQE2013-109 |
Yuya Wakasugi, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) |
| (12) |
16:40-17:05 |
A novel method for crystallizations of aluminum nitride ED2013-75 CPM2013-134 LQE2013-110 |
PeiTsen Wu, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (13) |
17:05-17:30 |
Fabrication of the multi-junction GaInN based solar cells using tunnel junction ED2013-76 CPM2013-135 LQE2013-111 |
Hironori Kurokawa, Tomomi Goda, Mitsuru Kaga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) |
Fri, Nov 29 AM
09:30 - 17:10 |
| (14) |
09:30-09:55 |
OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures ED2013-77 CPM2013-136 LQE2013-112 |
Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) |
| (15) |
09:55-10:20 |
Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy ED2013-78 CPM2013-137 LQE2013-113 |
Souichirou Kuwata, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) |
| (16) |
10:20-10:45 |
Growth of thick InGaN epilayer by high-pressure MOVPE |
Kouhei Yamashita, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) |
| |
10:45-11:00 |
Break ( 15 min. ) |
| (17) |
11:00-11:25 |
Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate ED2013-79 CPM2013-138 LQE2013-114 |
Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D) |
| (18) |
11:25-11:50 |
Annealing in N2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE ED2013-80 CPM2013-139 LQE2013-115 |
Gou Nishio, Shuhei Suzuki, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) |
| (19) |
11:50-12:15 |
Control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE ED2013-81 CPM2013-140 LQE2013-116 |
Shin Kitagawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) |
| |
12:15-13:30 |
Lunch Break ( 75 min. ) |
| (20) |
13:30-13:55 |
Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes ED2013-82 CPM2013-141 LQE2013-117 |
Takuya Mino (Riken/Panasonic), Hideki Hirayama (Riken), Norimichi Noguchi, Takayoshi Takano, Kenji Tsubaki (Riken/Panasonic) |
| (21) |
13:55-14:20 |
Realization of high-efficiency deep-UV LED by using transparent p-AlGaN contact layer ED2013-83 CPM2013-142 LQE2013-118 |
Noritoshi Maeda, Hideki Hirayama (RIKEN) |
| (22) |
14:20-14:45 |
Development of AlGaN DUV-LEDs ED2013-84 CPM2013-143 LQE2013-119 |
Masamichi Ippommatsu, Akira Hirano (UVCR), Hiroshi Amano (Nagoya Univ.), Isamu Akasaki (Meijyo Univ.) |
| (23) |
14:45-15:10 |
Growth of Connected Pillar AlN Buffer for AlGaN deep-UV LEDs ED2013-85 CPM2013-144 LQE2013-120 |
Shiro Toyoda (Saitama Univ./RIKEN), Hideki Hirayama (RIKEN), Norihiko Kamata (Saitama Univ.) |
| |
15:10-15:25 |
Break ( 15 min. ) |
| (24) |
15:25-15:50 |
Effects of Fabrication Process on Electrical Properties of InAlN MOS structures with ALD-Al2O3 ED2013-86 CPM2013-145 LQE2013-121 |
Masahito Chiba, Takuma Nakano, Masamichi Akazawa (Hokkaido Univ.) |
| (25) |
15:50-16:15 |
Interface properties of n-GaN MIS diodes with laminated ZrO2/Al2O3 films as a gate insulator ED2013-87 CPM2013-146 LQE2013-122 |
Shintaro Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) |
| (26) |
16:15-16:40 |
Photoelectrode properties of GaN porous structures formed by photo-assisted electrochemical process ED2013-88 CPM2013-147 LQE2013-123 |
Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) |
| (27) |
16:40-17:05 |
Evaluation of unwanted radiated emission from GaN-HEMT switching circuit ED2013-89 CPM2013-148 LQE2013-124 |
Toshihide Ide, Ryousaku Kaji, Mitsuaki Shimizu (AIST), Kenji Mizutani, Hiroaki Ueno, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) |
| |
17:05-17:10 |
Closing Address ( 5 min. ) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Tetsuzo Ueda（Panasonic)
TEL：+81-6-6906-4940、FAX：+81-6-6906-2426
E- ：      zo  pa   c
Seiya Kasai (Hokkaido Univ.)
TEL : 011-706-6509 Fax : 011-716-6004
E- :   irciqe  i |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
Tomomasa Sato (Kanagawa Univ.)
TEL +81-45-481-5661, FAX +81-45-491-7915
E-:  ut02  -u |
| LQE |
Technical Committee on Lasers and Quantum Electronics (LQE) [Latest Schedule]
|
| Contact Address |
Yu Tanaka (Fujitsu Laboratories)
TEL +81-46-250-8251, FAX +81-46-250-8146
E-:  _  
Hiroshi Aruga (Mitsubishi Electric)
TEL +81-467-41-2906，FAX +81-467-41-2519
E-: A Hi  abMibiElect c |
| Announcement |
Homepage of LQE is http://www.ieice.org/~lqe/jpn/ |
Last modified: 2013-09-20 23:28:30
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