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| Presentation | 2013-12-13 14:40 The Effect of Solvent Substitution on Memory Characteristics of Cu/HfO2/Pt Conducting-Bridge Random Access Memory (CB-RAM) Sho Hasegawa, Yutaro Enomoto, Naonobu Katada, Toshiyuki Ito, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)  SDM2013-129 Link to ES Tech. Rep. Archives: SDM2013-129 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A ‘pore engineering’, which is a method for controlling the memory performance of conducting-bridge random access memory (CB-RAM) by regarding the polycrystalline oxide memory layer as a nanoporous body, is proposed. This method is intended to control the resistive switching properties by controlling the size, physical and chemical properties of the pores, and by providing an appropriate solvent to pores. In this paper, we confirmed that both forming and set voltages were decreased by providing solvents (water and ion liquids of [bmim][TFSA] and [P1ME][TFSA]) to the HfO2 layer of Cu/HfO2/Pt structures. In addition, the relationship of Ireset∝1/RLRS was true independently of types of solvents, suggesting that reset occurs by a common mechanism. On the other hand, Ireset decreased remarkably only when water was provided. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | CB-RAM / water / HfO2 / ion migration / nanopore / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 351, SDM2013-129, pp. 79-83, Dec. 2013. | |
| Paper # | SDM2013-129 | |
| Date of Issue | 2013-12-06 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2013-129 Link to ES Tech. Rep. Archives: SDM2013-129 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2013-12-13 - 2013-12-13 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | NAIST |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Characterization of Si related materials |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2013-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Effect of Solvent Substitution on Memory Characteristics of Cu/HfO2/Pt Conducting-Bridge Random Access Memory (CB-RAM) |
| Sub Title (in English) | |
| Keyword(1) | CB-RAM |
| Keyword(2) | water |
| Keyword(3) | HfO2 |
| Keyword(4) | ion migration |
| Keyword(5) | nanopore |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Sho Hasegawa |
| 1st Author's Affiliation | Tottori University (Tottori Univ.) |
| 2nd Author's Name | Yutaro Enomoto |
| 2nd Author's Affiliation | Tottori University (Tottori Univ.) |
| 3rd Author's Name | Naonobu Katada |
| 3rd Author's Affiliation | Tottori University (Tottori Univ.) |
| 4th Author's Name | Toshiyuki Ito |
| 4th Author's Affiliation | Tottori University (Tottori Univ.) |
| 5th Author's Name | Satoru Kishida |
| 5th Author's Affiliation | Tottori University (Tottori Univ.) |
| 6th Author's Name | Kentaro Kinoshita |
| 6th Author's Affiliation | Tottori University (Tottori Univ.) |
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| Speaker | Author-1 |
| Date Time | 2013-12-13 14:40:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2013-129 |
| Volume (vol) | vol.113 |
| Number (no) | no.351 |
| Page | pp.79-83 |
| #Pages | 5 |
| Date of Issue | 2013-12-06 (SDM) |
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