Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings[Type 1 Only]
NOTICE: Due to an emergency maintenance from Oct. 22, 2026, some system functions are currently restricted. Manuscript uploads are unavailable from October 26 through October 30. For speakers whose manuscript submission deadline within this period, we will provide individual guidance on how to upload. We apologize for the inconvenience.
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2013-12-17 10:35
THz emission from S.I.-GaAs by below gap excitation
Yusaku Shimizu, Hikari Dezaki, Kensaku Maeda, Yutaka Oyama (Tohoku Univ.) ED2013-103
Abstract (in Japanese) (See Japanese page) 
(in English) Terahertz emission by radiative optical transitions in semi-conductors via shallow electronic state is investigated. Electrons can be excited to conduction band in Semi-Insulating GaAs (S.I.-GaAs) with below gap excitation energy using EL2 level which is located at the center of band gap. In this work, terahertz emission is observed from S.I.-GaAs by below gap excitation. The pump laser used is 1 m-wavelength DFB laser. For investigating the emission mechanisms, temperature dependence of terahertz emission intensity and emitted wave frequency characteristics are measured. It is shown that intense terahertz emission from S.I.-GaAs over high temperature area (120K~) was observed due to the thermal recovery of photo- quenched EL2 metastable state, and it means that shallow level transitions occur by below gap excitation via mid gap electronic state of EL2 level.
Keyword (in Japanese) (See Japanese page) 
(in English) Terahertz wave / gallium arsenide / EL2 level / / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 357, ED2013-103, pp. 75-79, Dec. 2013.
Paper # ED2013-103 
Date of Issue 2013-12-09 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-103

Conference Information
Committee ED  
Conference Date 2013-12-16 - 2013-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Research Institute of Electrical Communication Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter wave, terahertz wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2013-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) THz emission from S.I.-GaAs by below gap excitation 
Sub Title (in English)  
Keyword(1) Terahertz wave  
Keyword(2) gallium arsenide  
Keyword(3) EL2 level  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yusaku Shimizu  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Hikari Dezaki  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Kensaku Maeda  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Yutaka Oyama  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2013-12-17 10:35:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-103 
Volume (vol) vol.113 
Number (no) no.357 
Page pp.75-79 
#Pages 5 
Date of Issue 2013-12-09 (ED) 

[Return to Top Page]

[Return to IEICE Web Page]

(Line Height for English Pages: 1)
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan