Paper Abstract and Keywords |
Presentation |
2014-01-17 09:30
Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189 Link to ES Tech. Rep. Archives: ED2013-124 MW2013-189 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, low on-resistance and high area efficiency. We fabricated vertical Heterojunction Field Effect Transistors (HFETs) and vertical Schottky Barrier Diodes (SBDs) on free-standing GaN substrates with low dislocation density, measured static characteristics. We also measured reverse recovery and aging characteristics of vertical SBDs. Vertical SBDs showed faster reverse recovery than Si and SiC diodes, and stable forward/reverse aging characteristics for 1000h. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN substrate / AlGaN/GaN / heterojunction field-effect transistor / schottky barrier diode / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 378, ED2013-124, pp. 79-84, Jan. 2014. |
Paper # |
ED2013-124 |
Date of Issue |
2014-01-09 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2013-124 MW2013-189 Link to ES Tech. Rep. Archives: ED2013-124 MW2013-189 |
Conference Information |
Committee |
ED MW |
Conference Date |
2014-01-16 - 2014-01-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Power devices, High-speed and high-frequency devices, Microwave Technologies, etc. |
Paper Information |
Registration To |
ED |
Conference Code |
2014-01-ED-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates |
Sub Title (in English) |
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Keyword(1) |
GaN substrate |
Keyword(2) |
AlGaN/GaN |
Keyword(3) |
heterojunction field-effect transistor |
Keyword(4) |
schottky barrier diode |
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1st Author's Name |
Susumu Yoshimoto |
1st Author's Affiliation |
Sumitomo Electric Industries, Ltd. (Sumitomo Electric) |
2nd Author's Name |
Kuniaki Ishihara |
2nd Author's Affiliation |
Sumitomo Electric Industries, Ltd. (Sumitomo Electric) |
3rd Author's Name |
Masaya Okada |
3rd Author's Affiliation |
Sumitomo Electric Industries, Ltd. (Sumitomo Electric) |
4th Author's Name |
Kazuhide Sumiyoshi |
4th Author's Affiliation |
Sumitomo Electric Industries, Ltd. (Sumitomo Electric) |
5th Author's Name |
Hidenori Hirano |
5th Author's Affiliation |
Sumitomo Electric Industries, Ltd. (Sumitomo Electric) |
6th Author's Name |
Fuminori Mitsuhashi |
6th Author's Affiliation |
Sumitomo Electric Industries, Ltd. (Sumitomo Electric) |
7th Author's Name |
Yusuke Yoshizumi |
7th Author's Affiliation |
Sumitomo Electric Industries, Ltd. (Sumitomo Electric) |
8th Author's Name |
Takashi Ishizuka |
8th Author's Affiliation |
Sumitomo Electric Industries, Ltd. (Sumitomo Electric) |
9th Author's Name |
Makoto Kiyama |
9th Author's Affiliation |
Sumitomo Electric Industries, Ltd. (Sumitomo Electric) |
10th Author's Name |
Masaki Ueno |
10th Author's Affiliation |
Sumitomo Electric Industries, Ltd. (Sumitomo Electric) |
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Speaker |
Author-1 |
Date Time |
2014-01-17 09:30:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2013-124, MW2013-189 |
Volume (vol) |
vol.113 |
Number (no) |
no.378(ED), no.379(MW) |
Page |
pp.79-84 |
#Pages |
6 |
Date of Issue |
2014-01-09 (ED, MW) |
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