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Paper Abstract and Keywords
Presentation 2014-01-17 09:30
Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates
Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189
Abstract (in Japanese) (See Japanese page) 
(in English) Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, low on-resistance and high area efficiency. We fabricated vertical Heterojunction Field Effect Transistors (HFETs) and vertical Schottky Barrier Diodes (SBDs) on free-standing GaN substrates with low dislocation density, measured static characteristics. We also measured reverse recovery and aging characteristics of vertical SBDs. Vertical SBDs showed faster reverse recovery than Si and SiC diodes, and stable forward/reverse aging characteristics for 1000h.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN substrate / AlGaN/GaN / heterojunction field-effect transistor / schottky barrier diode / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 378, ED2013-124, pp. 79-84, Jan. 2014.
Paper # ED2013-124 
Date of Issue 2014-01-09 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2013-124 MW2013-189

Conference Information
Committee ED MW  
Conference Date 2014-01-16 - 2014-01-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Power devices, High-speed and high-frequency devices, Microwave Technologies, etc. 
Paper Information
Registration To ED 
Conference Code 2014-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates 
Sub Title (in English)  
Keyword(1) GaN substrate  
Keyword(2) AlGaN/GaN  
Keyword(3) heterojunction field-effect transistor  
Keyword(4) schottky barrier diode  
Keyword(5)  
Keyword(6)  
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1st Author's Name Susumu Yoshimoto  
1st Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric)
2nd Author's Name Kuniaki Ishihara  
2nd Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric)
3rd Author's Name Masaya Okada  
3rd Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric)
4th Author's Name Kazuhide Sumiyoshi  
4th Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric)
5th Author's Name Hidenori Hirano  
5th Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric)
6th Author's Name Fuminori Mitsuhashi  
6th Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric)
7th Author's Name Yusuke Yoshizumi  
7th Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric)
8th Author's Name Takashi Ishizuka  
8th Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric)
9th Author's Name Makoto Kiyama  
9th Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric)
10th Author's Name Masaki Ueno  
10th Author's Affiliation Sumitomo Electric Industries, Ltd. (Sumitomo Electric)
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Speaker Author-1 
Date Time 2014-01-17 09:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2013-124, MW2013-189 
Volume (vol) vol.113 
Number (no) no.378(ED), no.379(MW) 
Page pp.79-84 
#Pages 6 
Date of Issue 2014-01-09 (ED, MW) 

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