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| Presentation | 2014-01-28 15:00 [Poster Presentation] Diode Modeling with Lossy Nonlinear Capacitance Model Ryo Nahara, Kosuke Katayama, Kyoya Takano, Mizuki Motoyoshi, Shuhei Amakawa, Takeshi Yoshida, Minoru Fujishima (Hiroshima Univ.)  ICD2013-127 Link to ES Tech. Rep. Archives: ICD2013-127 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | For precise estimation of power consumption and circuit characteristics, MOSFET models used in circuit simulation should have predictive power for measured results of DC, small-signal and large-signal characteristics. By using the MOSFET model constructed only from small-signal characteristics, however, measured and simulated results of large-signal characteristics often show considerable discrepancy. In this paper, a nonlinear diode model, as a part of the MOSFET, is obtained from bias-dependent scattering parameters. A pn diode is fabricated with 65nm CMOS process and it is modeled as a lossy nonlinear capacitor using voltage-dependent small-signal characteristics from DC to 60 GHz. The diode model is expected to contribute to a predictive MOSFET model for large-signal characteristics as well as small-signal characteristics. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | diode / MOSFET / modeling / non-linear device / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 113, no. 419, ICD2013-127, pp. 63-63, Jan. 2014. | |
| Paper # | ICD2013-127 | |
| Date of Issue | 2014-01-21 (ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ICD2013-127 Link to ES Tech. Rep. Archives: ICD2013-127 |
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| Conference Information | |
| Committee | ICD |
| Conference Date | 2014-01-28 - 2014-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto Univ. Tokeidai Kinenkan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ICD |
| Conference Code | 2014-01-ICD |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Diode Modeling with Lossy Nonlinear Capacitance Model |
| Sub Title (in English) | |
| Keyword(1) | diode |
| Keyword(2) | MOSFET |
| Keyword(3) | modeling |
| Keyword(4) | non-linear device |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ryo Nahara |
| 1st Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 2nd Author's Name | Kosuke Katayama |
| 2nd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 3rd Author's Name | Kyoya Takano |
| 3rd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name | Mizuki Motoyoshi |
| 4th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 5th Author's Name | Shuhei Amakawa |
| 5th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 6th Author's Name | Takeshi Yoshida |
| 6th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 7th Author's Name | Minoru Fujishima |
| 7th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
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| Speaker | Author-1 |
| Date Time | 2014-01-28 15:00:00 |
| Presentation Time | 120 minutes |
| Registration for | ICD |
| Paper # | ICD2013-127 |
| Volume (vol) | vol.113 |
| Number (no) | no.419 |
| Page | p.63 |
| #Pages | 1 |
| Date of Issue | 2014-01-21 (ICD) |
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