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Paper Abstract and Keywords
Presentation 2014-01-28 15:00
[Poster Presentation] Reliability Evaluation of NAND Flash Memories
Yuta Kitamura (Chuo Univ.), Shuhei Tanakamaru (Chuo Univ./Univ. of Tokyo), Ken Takeuchi (Chuo Univ) ICD2013-117
Abstract (in Japanese) (See Japanese page) 
(in English) NAND flash memory operates as a memory by inserting/removing electrons to/from floating gate (FG) by a high voltage. Since the number of electrons in the FG decreases by the scaling of NAND flash memory, one electron falling out from the FG during data retention has significant impact on the reliability characteristics. In addition, due to the number of rewriting and temperature, reliability characteristics of NAND flash memory also change. This paper shows data retention evaluation of NAND flash memory by changing the number of rewriting and temperature. Furthermore, the error patterns of NAND flash memory are inspected to propose a high reliability technique.
Keyword (in Japanese) (See Japanese page) 
(in English) NAND flash memory / reliability / data retention / / / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 419, ICD2013-117, pp. 43-43, Jan. 2014.
Paper # ICD2013-117 
Date of Issue 2014-01-21 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2013-117

Conference Information
Committee ICD  
Conference Date 2014-01-28 - 2014-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. Tokeidai Kinenkan 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2014-01-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Reliability Evaluation of NAND Flash Memories 
Sub Title (in English)  
Keyword(1) NAND flash memory  
Keyword(2) reliability  
Keyword(3) data retention  
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1st Author's Name Yuta Kitamura  
1st Author's Affiliation Chuo University (Chuo Univ.)
2nd Author's Name Shuhei Tanakamaru  
2nd Author's Affiliation Chuo University/University of Tokyo (Chuo Univ./Univ. of Tokyo)
3rd Author's Name Ken Takeuchi  
3rd Author's Affiliation Chuo University (Chuo Univ)
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Speaker Author-1 
Date Time 2014-01-28 15:00:00 
Presentation Time 120 minutes 
Registration for ICD 
Paper # ICD2013-117 
Volume (vol) vol.113 
Number (no) no.419 
Page p.43 
#Pages 1 
Date of Issue 2014-01-21 (ICD) 

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