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Paper Abstract and Keywords
Presentation 2014-01-29 13:00
[Invited Talk] Next-Generation Solid-State-Drive Design with Semiconductor Non-Volatile Memories
Koh Johguchi (Chuo Univ.) ICD2013-135
Abstract (in Japanese) (See Japanese page) 
(in English) Thanks to the recent fabrication technology development, the bit cost of NAND flash memories has been reduced. Thus, solid-state-drives (SSDs) replace hard-disk-drives (HDDs) as storage devices. This replacement trend is not exclusive to mobile devices but extended to data-center applications which require higher performance and reliability. In order to meet these requirements, it is essential to understand the device characteristics of the non-volatile memories and to develop the circuits and systems which fully utilize their advanced property. Therefore, this paper presents the current status and issues of the mainstream semiconductor storage device; NAND flash memory and also introduces the design examples of the next generation storage class memories; resistive RAM (ReRAM) and phase change memory (PCM). In addition, some message will be passed to young student researchers from author's experience.
Keyword (in Japanese) (See Japanese page) 
(in English) Non-Volatile Memory / NAND Flash Memory / Resistive RAM / ReRAM / Phase Change Memory / PCM / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 419, ICD2013-135, pp. 83-83, Jan. 2014.
Paper # ICD2013-135 
Date of Issue 2014-01-21 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2013-135

Conference Information
Committee ICD  
Conference Date 2014-01-28 - 2014-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. Tokeidai Kinenkan 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2014-01-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Next-Generation Solid-State-Drive Design with Semiconductor Non-Volatile Memories 
Sub Title (in English)  
Keyword(1) Non-Volatile Memory  
Keyword(2) NAND Flash Memory  
Keyword(3) Resistive RAM  
Keyword(4) ReRAM  
Keyword(5) Phase Change Memory  
Keyword(6) PCM  
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Keyword(8)  
1st Author's Name Koh Johguchi  
1st Author's Affiliation Chuo University (Chuo Univ.)
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Speaker Author-1 
Date Time 2014-01-29 13:00:00 
Presentation Time 60 minutes 
Registration for ICD 
Paper # ICD2013-135 
Volume (vol) vol.113 
Number (no) no.419 
Page p.83 
#Pages 1 
Date of Issue 2014-01-21 (ICD) 

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