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Paper Abstract and Keywords
Presentation 2014-02-28 11:00
[Invited Talk] Impact of Back Grind Damage on Si Wafer Thinning for 3D Integration
Yoriko Mizushima (Fujitsu Lab./Tokyo Inst. of Tech.), Youngsuk Kim (Tokyo Inst. of Tech./Disco), Tomoji Nakamura (Fujitsu Lab.), Ryuichi Sugie, Hideki Hashimoto (Toray Research Center), Akira Uedono (Univ. of Tsukuba), Takayuki Ohba (Tokyo Inst. of Tech.) SDM2013-167
Abstract (in Japanese) (See Japanese page) 
(in English) Ultra-thin wafer is indispensable for bumpless 3D stacking. To know the thinning damage in detail, an atomic level defects occurred during wafer thinning and mechanical stress at micro region of the fracture surface have been studied. The damage was evaluated using µ-Raman spectroscopy, laser microscope, transmission electron microscope and positron annihilation spectroscopy. Coarse (#320 grit) grind causes roughly 500 MPa compressive stress and around 3 µm defect layer is formed. Fine (#2000 grit) grind enables to form a plane surface and reduces the stress down to 100-200 MPa. However the damaged layer of 200 nm is still remained and vacancy-type defect was exist almost 100 nm thick. After Chemical Mechanical Polish (CMP), no defects and stress-free surface were found except atomic level vacancies, which were detected a few nm thick after 1-um-CMP.
Keyword (in Japanese) (See Japanese page) 
(in English) Back grinding / Damage / Positron Annihilation Analysis / Raman / TEM / 3D-IC / Thinning /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 451, SDM2013-167, pp. 13-18, Feb. 2014.
Paper # SDM2013-167 
Date of Issue 2014-02-21 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2014-02-28 - 2014-02-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2014-02-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Impact of Back Grind Damage on Si Wafer Thinning for 3D Integration 
Sub Title (in English)  
Keyword(1) Back grinding  
Keyword(2) Damage  
Keyword(3) Positron Annihilation Analysis  
Keyword(4) Raman  
Keyword(5) TEM  
Keyword(6) 3D-IC  
Keyword(7) Thinning  
Keyword(8)  
1st Author's Name Yoriko Mizushima  
1st Author's Affiliation Fujitsu Laboratories Ltd./Tokyo Institute of Technology (Fujitsu Lab./Tokyo Inst. of Tech.)
2nd Author's Name Youngsuk Kim  
2nd Author's Affiliation Tokyo Institute of Technology/Disco Corporation (Tokyo Inst. of Tech./Disco)
3rd Author's Name Tomoji Nakamura  
3rd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
4th Author's Name Ryuichi Sugie  
4th Author's Affiliation Toray Research Center Inc. (Toray Research Center)
5th Author's Name Hideki Hashimoto  
5th Author's Affiliation Toray Research Center Inc. (Toray Research Center)
6th Author's Name Akira Uedono  
6th Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
7th Author's Name Takayuki Ohba  
7th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
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Speaker Author-1 
Date Time 2014-02-28 11:00:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2013-167 
Volume (vol) vol.113 
Number (no) no.451 
Page pp.13-18 
#Pages 6 
Date of Issue 2014-02-21 (SDM) 

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