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Paper Abstract and Keywords
Presentation 2014-04-10 15:30
[Invited Talk] Al-induced low-temperature crystallization for large-grained Ge(111) thin films on amorphous insulators
Kaoru Toko, Takashi Suemasu (Univ. of Tsukuba) SDM2014-6 OME2014-6
Abstract (in Japanese) (See Japanese page) 
(in English) We introduce Al-induced crystallization (AIC), a unique technique controlling the crystal orientation of polycrystalline Ge thin films on amorphous insulating substrates. The crystal quality of the Al-induced crystallized Ge layer is very sensitive to the growth parameters (e.g. thickness). By optimizing these parameters, we fabricated a 99% (111)-oriented Ge layer (50 nm) with large grains (~100 µm) on a SiO2 substrate. Moreover, we promoted the reaction between Al and Ge based on the growth mechanism, and then achieved a (111)-oriented Ge layer at as low as 180 ºC. This achievement holds promise for fabricating Ge-based flexible devices on inexpensive plastic substrates.
Keyword (in Japanese) (See Japanese page) 
(in English) Germanium / Thin film / Metal-induced crystallization / Crystal orientation control / low-temperature crystallization / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 1, SDM2014-6, pp. 27-29, April 2014.
Paper # SDM2014-6 
Date of Issue 2014-04-03 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2014-6 OME2014-6

Conference Information
Committee SDM OME  
Conference Date 2014-04-10 - 2014-04-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa-Ken-Seinen-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics 
Paper Information
Registration To SDM 
Conference Code 2014-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Al-induced low-temperature crystallization for large-grained Ge(111) thin films on amorphous insulators 
Sub Title (in English)  
Keyword(1) Germanium  
Keyword(2) Thin film  
Keyword(3) Metal-induced crystallization  
Keyword(4) Crystal orientation control  
Keyword(5) low-temperature crystallization  
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1st Author's Name Kaoru Toko  
1st Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
2nd Author's Name Takashi Suemasu  
2nd Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
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Speaker Author-1 
Date Time 2014-04-10 15:30:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2014-6, OME2014-6 
Volume (vol) vol.114 
Number (no) no.1(SDM), no.2(OME) 
Page pp.27-29 
#Pages 3 
Date of Issue 2014-04-03 (SDM, OME) 

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