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Paper Abstract and Keywords
Presentation 2014-04-11 10:30
Electrical Characterization of SiO2 Films Deposited by RF Sputtering Using O2/Ar Mixture
Kimihiko Imura, Tatsuya Okada, Kiyoharu Shimoda, Kouya Sugihara, Takashi Noguchi (Univ. of Ryukyus) SDM2014-13 OME2014-13
Abstract (in Japanese) (See Japanese page) 
(in English) For a fabrication of flexible display, high quality gate insulator films on a thermally durable substrate such as plastics are required. In this work, we deposited SiO2 films at room temperature by RF sputtering with a gas mixture of O2 and Ar. Deposited SiO2 films with ~20% O2 had good breakdown voltage as high as 6.9 MV/cm. The SiO2 films have a potential to realize high quality gate insulator for TFTs on plastics.
Keyword (in Japanese) (See Japanese page) 
(in English) Gate Insulator / Thin Film Transistor / SiO2 / RF Sputtering / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 1, SDM2014-13, pp. 55-57, April 2014.
Paper # SDM2014-13 
Date of Issue 2014-04-03 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2014-13 OME2014-13

Conference Information
Committee SDM OME  
Conference Date 2014-04-10 - 2014-04-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa-Ken-Seinen-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics 
Paper Information
Registration To SDM 
Conference Code 2014-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical Characterization of SiO2 Films Deposited by RF Sputtering Using O2/Ar Mixture 
Sub Title (in English)  
Keyword(1) Gate Insulator  
Keyword(2) Thin Film Transistor  
Keyword(3) SiO2  
Keyword(4) RF Sputtering  
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1st Author's Name Kimihiko Imura  
1st Author's Affiliation University of the Ryukyus (Univ. of Ryukyus)
2nd Author's Name Tatsuya Okada  
2nd Author's Affiliation University of the Ryukyus (Univ. of Ryukyus)
3rd Author's Name Kiyoharu Shimoda  
3rd Author's Affiliation University of the Ryukyus (Univ. of Ryukyus)
4th Author's Name Kouya Sugihara  
4th Author's Affiliation University of the Ryukyus (Univ. of Ryukyus)
5th Author's Name Takashi Noguchi  
5th Author's Affiliation University of the Ryukyus (Univ. of Ryukyus)
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Speaker Author-2 
Date Time 2014-04-11 10:30:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2014-13, OME2014-13 
Volume (vol) vol.114 
Number (no) no.1(SDM), no.2(OME) 
Page pp.55-57 
#Pages 3 
Date of Issue 2014-04-03 (SDM, OME) 

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