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Paper Abstract and Keywords
Presentation 2014-04-11 10:50
Fabrication of poly-Si TFT with low-temperature process using BLDA
Kiyoharu Shimoda, Kouya Sugihara, Kimihiko Imura, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus) SDM2014-14 OME2014-14
Abstract (in Japanese) (See Japanese page) 
(in English) Poly-Si TFTs by low cost fabrication process are required on glass as well as on flexible panel. Top-gate-type TFT without ion-implantation was fabricated with ultra-low temperature process below 400℃ using BLDA. Ti was adopted for source and drain. High performance TFTs formed by low cost process are expected on plastic and on flexible sheet using BLDA.
Keyword (in Japanese) (See Japanese page) 
(in English) TFT / Low temperature / Silicon / Crystallization / Laser annealing / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 1, SDM2014-14, pp. 59-61, April 2014.
Paper # SDM2014-14 
Date of Issue 2014-04-03 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2014-14 OME2014-14

Conference Information
Committee SDM OME  
Conference Date 2014-04-10 - 2014-04-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa-Ken-Seinen-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics 
Paper Information
Registration To SDM 
Conference Code 2014-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of poly-Si TFT with low-temperature process using BLDA 
Sub Title (in English)  
Keyword(1) TFT  
Keyword(2) Low temperature  
Keyword(3) Silicon  
Keyword(4) Crystallization  
Keyword(5) Laser annealing  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kiyoharu Shimoda  
1st Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
2nd Author's Name Kouya Sugihara  
2nd Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
3rd Author's Name Kimihiko Imura  
3rd Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
4th Author's Name Tatsuya Okada  
4th Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
5th Author's Name Takashi Noguchi  
5th Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
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Speaker Author-1 
Date Time 2014-04-11 10:50:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2014-14, OME2014-14 
Volume (vol) vol.114 
Number (no) no.1(SDM), no.2(OME) 
Page pp.59-61 
#Pages 3 
Date of Issue 2014-04-03 (SDM, OME) 

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