Paper Abstract and Keywords |
Presentation |
2014-04-18 09:50
Fabrication of hafnium oxide using room-temperature atomic layer deposition Kensaku Kanomata, Hisashi Ohba, Bashil Ahmmad Arima, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) ED2014-13 Link to ES Tech. Rep. Archives: ED2014-13 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Room-temperature atomic layer deposition (ALD) of hafnium dioxide is developed using tetrakis(ethylmethylamino)hafnium (TEMAH) and plasma-excited water vapor generated from a remote plasma source. The plasma-excited water vapor is effective in oxidizing the TEMAH-adsorbed HfO2 surface while leaving OH sites on the growing surface at room temperature for further TEMAH adsorption. The growth rate is measured to be 0.26 nm/cycle at room temperature. The TEMAH adsorption and its oxidation on HfO2 were investigated by multiple-internal-refraction infrared absorption spectroscopy (MIR-IRAS). We report adsorption and desorption data in order to design HfO2-ALD at room temperature. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ALD / TEMAH / Plasma-excited H2O / MIR-IRAS / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 12, ED2014-13, pp. 51-54, April 2014. |
Paper # |
ED2014-13 |
Date of Issue |
2014-04-10 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2014-13 Link to ES Tech. Rep. Archives: ED2014-13 |
Conference Information |
Committee |
ED |
Conference Date |
2014-04-17 - 2014-04-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
The 100th Anniversary Hall, Yamagata University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Organic Devices, Oxide Devices, and others |
Paper Information |
Registration To |
ED |
Conference Code |
2014-04-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Fabrication of hafnium oxide using room-temperature atomic layer deposition |
Sub Title (in English) |
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Keyword(1) |
ALD |
Keyword(2) |
TEMAH |
Keyword(3) |
Plasma-excited H2O |
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MIR-IRAS |
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1st Author's Name |
Kensaku Kanomata |
1st Author's Affiliation |
Yamagata University (Yamagata Univ.) |
2nd Author's Name |
Hisashi Ohba |
2nd Author's Affiliation |
Yamagata University (Yamagata Univ.) |
3rd Author's Name |
Bashil Ahmmad Arima |
3rd Author's Affiliation |
Yamagata University (Yamagata Univ.) |
4th Author's Name |
Shigeru Kubota |
4th Author's Affiliation |
Yamagata University (Yamagata Univ.) |
5th Author's Name |
Kazuhiro Hirahara |
5th Author's Affiliation |
Yamagata University (Yamagata Univ.) |
6th Author's Name |
Fumihiko Hirose |
6th Author's Affiliation |
Yamagata University (Yamagata Univ.) |
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Speaker |
Author-1 |
Date Time |
2014-04-18 09:50:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2014-13 |
Volume (vol) |
vol.114 |
Number (no) |
no.12 |
Page |
pp.51-54 |
#Pages |
4 |
Date of Issue |
2014-04-10 (ED) |
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