Paper Abstract and Keywords |
Presentation |
2014-04-18 13:50
[Invited Talk]
Multigate FinFET Device and Circuit Technology for 10nm and Beyond Meishoku Masahara, Kazuhiko Endo, Shin-ichi Ouchi, Takashi Matsukawa, Yongxun Liu, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota (AIST) ICD2014-15 Link to ES Tech. Rep. Archives: ICD2014-15 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
One of the biggest challenges for the VLSI circuits with 20-nm-technology nodes and beyond is to overcome the issue of a catastrophic increase in power dissipation of the circuit due to the short channel effects (SCEs) and electrical characteristic variability. Fortunately, double-gate FinFETs have a promising potential to overcome this issue due to their superior SCE immunity even with an undoped channel thanks to the 3D structure. This paper presents advanced FinFET device and circuit technologies for 10 nm node and beyond. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
FinFET / Variability / Amorphous Metal Gate / SRAM / Independent Double Gate / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 13, ICD2014-15, pp. 77-82, April 2014. |
Paper # |
ICD2014-15 |
Date of Issue |
2014-04-10 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ICD2014-15 Link to ES Tech. Rep. Archives: ICD2014-15 |