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Paper Abstract and Keywords
Presentation 2014-04-18 13:50
[Invited Talk] Multigate FinFET Device and Circuit Technology for 10nm and Beyond
Meishoku Masahara, Kazuhiko Endo, Shin-ichi Ouchi, Takashi Matsukawa, Yongxun Liu, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota (AIST) ICD2014-15 Link to ES Tech. Rep. Archives: ICD2014-15
Abstract (in Japanese) (See Japanese page) 
(in English) One of the biggest challenges for the VLSI circuits with 20-nm-technology nodes and beyond is to overcome the issue of a catastrophic increase in power dissipation of the circuit due to the short channel effects (SCEs) and electrical characteristic variability. Fortunately, double-gate FinFETs have a promising potential to overcome this issue due to their superior SCE immunity even with an undoped channel thanks to the 3D structure. This paper presents advanced FinFET device and circuit technologies for 10 nm node and beyond.
Keyword (in Japanese) (See Japanese page) 
(in English) FinFET / Variability / Amorphous Metal Gate / SRAM / Independent Double Gate / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 13, ICD2014-15, pp. 77-82, April 2014.
Paper # ICD2014-15 
Date of Issue 2014-04-10 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2014-15 Link to ES Tech. Rep. Archives: ICD2014-15

Conference Information
Committee ICD  
Conference Date 2014-04-17 - 2014-04-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2014-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Multigate FinFET Device and Circuit Technology for 10nm and Beyond 
Sub Title (in English)  
Keyword(1) FinFET  
Keyword(2) Variability  
Keyword(3) Amorphous Metal Gate  
Keyword(4) SRAM  
Keyword(5) Independent Double Gate  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Meishoku Masahara  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Kazuhiko Endo  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Shin-ichi Ouchi  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Takashi Matsukawa  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Yongxun Liu  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Shinji Migita  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Wataru Mizubayashi  
7th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
8th Author's Name Yukinori Morita  
8th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
9th Author's Name Hiroyuki Ota  
9th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2014-04-18 13:50:00 
Presentation Time 50 minutes 
Registration for ICD 
Paper # ICD2014-15 
Volume (vol) vol.114 
Number (no) no.13 
Page pp.77-82 
#Pages
Date of Issue 2014-04-10 (ICD) 


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