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Paper Abstract and Keywords
Presentation 2014-05-29 13:20
Deep levels near the valence band in p-type 4H-SiC epilayers with various Al concentrations
Hiroki Nakane, Masashi Kato, Masaya Ichimura (NIT) ED2014-38 CPM2014-21 SDM2014-36
Abstract (in Japanese) (See Japanese page) 
(in English) Understanding of the deep level is essential to control the carrier lifetime for ultrahigh-voltage SiC bipolar devices. The deep levels in p-type 4H-SiC, especially those located near the valence band edge, have been rarely reported, In this study, we measured the deep levels for p-type 4H-SiC with various Al-doping concentrations by using current deep level transient spectroscopy (I-DLTS). As the result, we observed some peaks which have never been reported.
Keyword p-type 4H-SiC, deep levels, I-DLTS
Keyword (in Japanese) (See Japanese page) 
(in English) p-type 4H-SiC / deep levels / I-DLTS / / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 56, ED2014-38, pp. 101-104, May 2014.
Paper # ED2014-38 
Date of Issue 2014-05-21 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-38 CPM2014-21 SDM2014-36

Conference Information
Committee CPM ED SDM  
Conference Date 2014-05-28 - 2014-05-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2014-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Deep levels near the valence band in p-type 4H-SiC epilayers with various Al concentrations 
Sub Title (in English)  
Keyword(1) p-type 4H-SiC  
Keyword(2) deep levels  
Keyword(3) I-DLTS  
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1st Author's Name Hiroki Nakane  
1st Author's Affiliation Nagoya Institute of Technology (NIT)
2nd Author's Name Masashi Kato  
2nd Author's Affiliation Nagoya Institute of Technology (NIT)
3rd Author's Name Masaya Ichimura  
3rd Author's Affiliation Nagoya Institute of Technology (NIT)
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Speaker Author-1 
Date Time 2014-05-29 13:20:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2014-38, CPM2014-21, SDM2014-36 
Volume (vol) vol.114 
Number (no) no.56(ED), no.57(CPM), no.58(SDM) 
Page pp.101-104 
#Pages 4 
Date of Issue 2014-05-21 (ED, CPM, SDM) 

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