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| Presentation | 2014-05-29 10:55 Characterization and analysis of hysteresis properties in insulated-gate GaAs-based nanowire FETs Ryota Kuroda, Xiang Yin, Masaki Sato, Seiya Kasai (Hokkaido Univ.)  ED2014-36 CPM2014-19 SDM2014-34 Link to ES Tech. Rep. Archives: ED2014-36 CPM2014-19 SDM2014-34 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We fabricate SiN- and Al2O3-gate GaAs etched nanowire FETs, characterized dynamic hysteresis properties in their transfer characteristics, and analyzed. Both devices show clear hysteresis characteristics, however the Al2O3-gate device exhibits large dispersion of the average current when white Gaussian noise is superimposed to gate bias. In this dispersion, the drain current decreases as the noise intensity increases, without changing threshold voltages, which is not seen in the SiN-gate device. We explain the observed behavior by current expected value under transition between the discrete current states. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Nanowire FET / Hysteresis / Current dispersion / Insulated gate / GaAs / SiN / Al2O3 / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 56, ED2014-36, pp. 91-96, May 2014. | |
| Paper # | ED2014-36 | |
| Date of Issue | 2014-05-21 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2014-36 CPM2014-19 SDM2014-34 Link to ES Tech. Rep. Archives: ED2014-36 CPM2014-19 SDM2014-34 |
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| Conference Information | |
| Committee | CPM ED SDM |
| Conference Date | 2014-05-28 - 2014-05-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2014-05-CPM-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization and analysis of hysteresis properties in insulated-gate GaAs-based nanowire FETs |
| Sub Title (in English) | |
| Keyword(1) | Nanowire FET |
| Keyword(2) | Hysteresis |
| Keyword(3) | Current dispersion |
| Keyword(4) | Insulated gate |
| Keyword(5) | GaAs |
| Keyword(6) | SiN |
| Keyword(7) | Al2O3 |
| Keyword(8) | |
| 1st Author's Name | Ryota Kuroda |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Xiang Yin |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 3rd Author's Name | Masaki Sato |
| 3rd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 4th Author's Name | Seiya Kasai |
| 4th Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
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| Speaker | Author-1 |
| Date Time | 2014-05-29 10:55:00 |
| Presentation Time | 20 minutes |
| Registration for | ED |
| Paper # | ED2014-36, CPM2014-19, SDM2014-34 |
| Volume (vol) | vol.114 |
| Number (no) | no.56(ED), no.57(CPM), no.58(SDM) |
| Page | pp.91-96 |
| #Pages | 6 |
| Date of Issue | 2014-05-21 (ED, CPM, SDM) |
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