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Paper Abstract and Keywords
Presentation 2014-05-29 14:00
P - GaN by Mg Ion Implantation for Power Device Applications
Zheng Sun, Marc Olsson (Nagoya Univ.), Tsutomu Nagayama (Nissin Ion Equipment), Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2014-40 CPM2014-23 SDM2014-38
Abstract (in Japanese) (See Japanese page) 
(in English) We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique and high temperature implantation, ion implantation damage was greatly reduced. It made the post anneal more effectively to recover the implantation damage and active the implanted Mg ions. We believe this p-GaN by Mg ion implantation will contribute to GaN to enter high output power device application field.
Keyword (in Japanese) (See Japanese page) 
(in English) P-GaN / ion implantation / pre-sputter / power device / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 56, ED2014-40, pp. 109-112, May 2014.
Paper # ED2014-40 
Date of Issue 2014-05-21 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-40 CPM2014-23 SDM2014-38

Conference Information
Committee CPM ED SDM  
Conference Date 2014-05-28 - 2014-05-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2014-05-CPM-ED-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) P - GaN by Mg Ion Implantation for Power Device Applications 
Sub Title (in English)  
Keyword(1) P-GaN  
Keyword(2) ion implantation  
Keyword(3) pre-sputter  
Keyword(4) power device  
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Keyword(6)  
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1st Author's Name Zheng Sun  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Marc Olsson  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Tsutomu Nagayama  
3rd Author's Affiliation Nissin Ion Equipment Co., Ltd. (Nissin Ion Equipment)
4th Author's Name Yoshio Honda  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Hiroshi Amano  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2014-05-29 14:00:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2014-40, CPM2014-23, SDM2014-38 
Volume (vol) vol.114 
Number (no) no.56(ED), no.57(CPM), no.58(SDM) 
Page pp.109-112 
#Pages 4 
Date of Issue 2014-05-21 (ED, CPM, SDM) 

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