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Paper Abstract and Keywords
Presentation 2014-06-19 11:05
Control of Stacking Fault Structures in Ge1-xSnx Epitaxial Growth
Takanori Asano (Nagoya Univ.), Noriyuki Taoka (IHP Microelectronics), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-47
Abstract (in Japanese) (See Japanese page) 
(in English) Ge or Ge1－xSnx layer with (110) surface has attracted much attentions for Ge multi-gate MOS transistors. For forming a high-quality layer on Ge(110), it is important to suppress the formation of twin or stacking fault (SF). We found that the SF width can be decreased by increasing the Sn content based on understanding the relationship between the defect morphologies and the Sn content. We also found that the defects in Ge1－xSnx with a small Sn content are suppressed by increasing the growth temperature. We demonstrate that defects in Ge and Ge1－xSnx layers can be controlled by the growth temperature and Sn content.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge1-xSnx / epitaxial growth / stacking fault / strain / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 88, SDM2014-47, pp. 21-25, June 2014.
Paper # SDM2014-47 
Date of Issue 2014-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2014-47

Conference Information
Committee SDM  
Conference Date 2014-06-19 - 2014-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2014-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Control of Stacking Fault Structures in Ge1-xSnx Epitaxial Growth 
Sub Title (in English)  
Keyword(1) Ge1-xSnx  
Keyword(2) epitaxial growth  
Keyword(3) stacking fault  
Keyword(4) strain  
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1st Author's Name Takanori Asano  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Noriyuki Taoka  
2nd Author's Affiliation Innovations for High Performance Microelectronics (IHP Microelectronics)
3rd Author's Name Osamu Nakatsuka  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Shigeaki Zaima  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2014-06-19 11:05:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2014-47 
Volume (vol) vol.114 
Number (no) no.88 
Page pp.21-25 
#Pages 5 
Date of Issue 2014-06-12 (SDM) 

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