Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2014-06-19 13:45
Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO2
Hiroki Shirakawa, Keita Yamaguchi (Univ. of Tsukuba), Katsumasa Kamiya (KAIT), Kenji Shiraishi (Nagoya Univ.) SDM2014-52
Abstract (in Japanese) (See Japanese page) 
(in English) Charge trapping memories such as the MONOS (Metal-Oxide-Nitride-Oxide-Semiconductor) type memories naturally have the characteristic for making the MLC (Multi Level Cell), 3D-structure, and high￢-density integration. About charge trapping layers in MONOS type memories, it has been reported that many O and N atoms are incorporated and electron occupied defects are confirmed near Si$O_2$/SiN interfaces. Yamaguchi et al. reported the atomistic mechanism during Program/Erase (P/E) cycle in SiN layer. However, atomistic behavior of defects in Si$O_2$ layer during P/E cycle is not elucidated. Thus, we investigate N and H incorporation effects in Si-rich Si$O_2$ by using first principle calculation.
Keyword (in Japanese) (See Japanese page) 
(in English) MONOS / charge trapping memory / SiO2 / / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 88, SDM2014-52, pp. 49-53, June 2014.
Paper # SDM2014-52 
Date of Issue 2014-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2014-52

Conference Information
Committee SDM  
Conference Date 2014-06-19 - 2014-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2014-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO2 
Sub Title (in English)  
Keyword(1) MONOS  
Keyword(2) charge trapping memory  
Keyword(3) SiO2  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroki Shirakawa  
1st Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
2nd Author's Name Keita Yamaguchi  
2nd Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
3rd Author's Name Katsumasa Kamiya  
3rd Author's Affiliation Kanagawa Institute of Technology (KAIT)
4th Author's Name Kenji Shiraishi  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2014-06-19 13:45:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2014-52 
Volume (vol) vol.114 
Number (no) no.88 
Page pp.49-53 
#Pages 5 
Date of Issue 2014-06-12 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan