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Paper Abstract and Keywords
Presentation 2014-06-20 14:20
Epitaxial growth of nitrogen-doped ZnO thin films on a-plane sapphire substrates using high-energy H2O generated by a catalytic reaction
Yuki Ohashi, Shingo Kanouchi, Naoya Yamaguchi, Yasuhiro Tamayama, Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) EMD2014-17 CPM2014-37 OME2014-25 Link to ES Tech. Rep. Archives: EMD2014-17 CPM2014-37 OME2014-25
Abstract (in Japanese) (See Japanese page) 
(in English) ZnO films were grown on a-plane sapphire substrates using a reaction between an alkylzinc (DMZn) gas and high-energy H2O, the latter is generated by a Pt-catalyzed exothermic H2-O2 reaction. N2O gas was added in the reaction zone during the film growth. The influence of the N2O gas supply on the properties of the ZnO films was investigated. Although all films showed an n-type character, FWHM value of -rocking curve of ZnO (0002) diffraction of a N2O doped (3.2×10-3 Pa) film was 146 arcsec, while that of an undoped ZnO film was 205 arcsec. FWHM values of the donor-bound exiciton (Dox) emission of the N2O doped ZnO films were 0.6-0.7 meV, while that of an undoped ZnO film was 0.9 meV. Nitrogen concentrations in all N2O doped samples were lower than the detection limit (2×1017 cm-3) of SIMS. From the improvement of the crystallinity, crystal orientation and the size of crystalline facets, however, nitrogen precursors generated by the reaction between the high-energy H2O and the N2O gas were speculated to play a role of surfactants on the growing-film surface.
Keyword (in Japanese) (See Japanese page) 
(in English) ZnO / catalytic reaction / high-energy H2O / x-ray diffraction / PL spectra / SIMS / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 95, CPM2014-37, pp. 49-53, June 2014.
Paper # CPM2014-37 
Date of Issue 2014-06-13 (EMD, CPM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF EMD2014-17 CPM2014-37 OME2014-25 Link to ES Tech. Rep. Archives: EMD2014-17 CPM2014-37 OME2014-25

Conference Information
Committee OME EMD CPM  
Conference Date 2014-06-20 - 2014-06-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2014-06-OME-EMD-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Epitaxial growth of nitrogen-doped ZnO thin films on a-plane sapphire substrates using high-energy H2O generated by a catalytic reaction 
Sub Title (in English)  
Keyword(1) ZnO  
Keyword(2) catalytic reaction  
Keyword(3) high-energy H2O  
Keyword(4) x-ray diffraction  
Keyword(5) PL spectra  
Keyword(6) SIMS  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuki Ohashi  
1st Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Technol.)
2nd Author's Name Shingo Kanouchi  
2nd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Technol.)
3rd Author's Name Naoya Yamaguchi  
3rd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Technol.)
4th Author's Name Yasuhiro Tamayama  
4th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Technol.)
5th Author's Name Takahiro Kato  
5th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Technol.)
6th Author's Name Kanji Yasui  
6th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. Technol.)
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Speaker Author-1 
Date Time 2014-06-20 14:20:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # EMD2014-17, CPM2014-37, OME2014-25 
Volume (vol) vol.114 
Number (no) no.94(EMD), no.95(CPM), no.96(OME) 
Page pp.49-53 
#Pages
Date of Issue 2014-06-13 (EMD, CPM, OME) 


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