Paper Abstract and Keywords |
Presentation |
2014-06-20 14:20
Epitaxial growth of nitrogen-doped ZnO thin films on a-plane sapphire substrates using high-energy H2O generated by a catalytic reaction Yuki Ohashi, Shingo Kanouchi, Naoya Yamaguchi, Yasuhiro Tamayama, Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) EMD2014-17 CPM2014-37 OME2014-25 Link to ES Tech. Rep. Archives: EMD2014-17 CPM2014-37 OME2014-25 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
ZnO films were grown on a-plane sapphire substrates using a reaction between an alkylzinc (DMZn) gas and high-energy H2O, the latter is generated by a Pt-catalyzed exothermic H2-O2 reaction. N2O gas was added in the reaction zone during the film growth. The influence of the N2O gas supply on the properties of the ZnO films was investigated. Although all films showed an n-type character, FWHM value of -rocking curve of ZnO (0002) diffraction of a N2O doped (3.2×10-3 Pa) film was 146 arcsec, while that of an undoped ZnO film was 205 arcsec. FWHM values of the donor-bound exiciton (Dox) emission of the N2O doped ZnO films were 0.6-0.7 meV, while that of an undoped ZnO film was 0.9 meV. Nitrogen concentrations in all N2O doped samples were lower than the detection limit (2×1017 cm-3) of SIMS. From the improvement of the crystallinity, crystal orientation and the size of crystalline facets, however, nitrogen precursors generated by the reaction between the high-energy H2O and the N2O gas were speculated to play a role of surfactants on the growing-film surface. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ZnO / catalytic reaction / high-energy H2O / x-ray diffraction / PL spectra / SIMS / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 95, CPM2014-37, pp. 49-53, June 2014. |
Paper # |
CPM2014-37 |
Date of Issue |
2014-06-13 (EMD, CPM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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EMD2014-17 CPM2014-37 OME2014-25 Link to ES Tech. Rep. Archives: EMD2014-17 CPM2014-37 OME2014-25 |
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