Paper Abstract and Keywords |
Presentation |
2014-08-04 13:05
[Invited Talk]
Research progress in steep slope devices and technologies to enhance ON current in TFETs Takahiro Mori, Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Noriyuki Miyata, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-67 ICD2014-36 Link to ES Tech. Rep. Archives: SDM2014-67 ICD2014-36 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Steep slope devices (SSDs) have attracted because of the increase demand for low-power devices. This paper reviews recent research progress in SSDs. Tunnel field-effect transistor (TFET), which is the front runner in SSDs, has a problem in their ON current. There are two ways to enhance the ON current; one is by enhancing electric-field at the junction, and another is by realizing high tunneling probability. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Steep slope devices / tunnel field-effect transistor / synthetic electric field / isoelectronic trap / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 174, SDM2014-67, pp. 29-34, Aug. 2014. |
Paper # |
SDM2014-67 |
Date of Issue |
2014-07-28 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2014-67 ICD2014-36 Link to ES Tech. Rep. Archives: SDM2014-67 ICD2014-36 |
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