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Paper Abstract and Keywords
Presentation 2014-08-05 09:00
[Invited Talk] Ultra-Low Voltage (0.1V) Operation of Threshold Voltage Self-Adjusting MOSFET and SRAM Cell
Toshiro Hiramoto, Akitsugu Ueda, Seung-Min Jung, Tomoko Mizutani, Takuya Saraya (Univ. of Tokyo) SDM2014-71 ICD2014-40
Abstract (in Japanese) (See Japanese page) 
(in English) A new Vth self-adjusting MOSFET operating at 0.1V is proposed, where Vth automatically decreases at on-state and increases at off-state, resulting in high Ion/Ioff ratio as well as stable SRAM operation at low Vdd. The device has a floating gate. The charges are injected into and from the floating gate, and Vth is self-adjusted. The Vth self-adjustment of nFETs and pFETs at 0.1V and the minimum operation voltage in 6T SRAM cell at 0.1V are experimentally demonstrated.
Keyword (in Japanese) (See Japanese page) 
(in English) Floating Gate / Subthreshold operation / SRAM noise margin / 100mV operation / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 174, SDM2014-71, pp. 51-54, Aug. 2014.
Paper # SDM2014-71 
Date of Issue 2014-07-28 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2014-71 ICD2014-40

Conference Information
Committee ICD SDM  
Conference Date 2014-08-04 - 2014-08-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ., Multimedia Education Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2014-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ultra-Low Voltage (0.1V) Operation of Threshold Voltage Self-Adjusting MOSFET and SRAM Cell 
Sub Title (in English)  
Keyword(1) Floating Gate  
Keyword(2) Subthreshold operation  
Keyword(3) SRAM noise margin  
Keyword(4) 100mV operation  
Keyword(5)  
Keyword(6)  
Keyword(7)  
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1st Author's Name Toshiro Hiramoto  
1st Author's Affiliation The University of Tokyo (Univ. of Tokyo)
2nd Author's Name Akitsugu Ueda  
2nd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
3rd Author's Name Seung-Min Jung  
3rd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
4th Author's Name Tomoko Mizutani  
4th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
5th Author's Name Takuya Saraya  
5th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
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Speaker Author-1 
Date Time 2014-08-05 09:00:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2014-71, ICD2014-40 
Volume (vol) vol.114 
Number (no) no.174(SDM), no.175(ICD) 
Page pp.51-54 
#Pages 4 
Date of Issue 2014-07-28 (SDM, ICD) 

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