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Paper Abstract and Keywords
Presentation 2014-08-22 11:10
Realization of GaAs1-xBix laser diodes with low temperature dependence of oscillation wavelength
Takuma Fuyuki, Kenji Yoshida, Ryo Yoshioka, Masahiro Yoshimoto (Kyoto Inst. Tech.) R2014-40 EMD2014-45 CPM2014-60 OPE2014-70 LQE2014-44 Link to ES Tech. Rep. Archives: EMD2014-45 CPM2014-60 OPE2014-70 LQE2014-44
Abstract (in Japanese) (See Japanese page) 
(in English) The coherent epitaxial growth GaAs1-xBix (x = 9.5%) films on GaAs substrate with high optical quality was achieved grown by molecular beam epitaxy. For GaAs0.905Bi0.095 film, photoluminescence (PL) at 1.3 um without PL intensity degradation was observed at room temperature. Lasing oscillation at wavelengths up to 1045 nm at room temperature has been realized from high quality GaAs1-xBix Fabry-Perot laser diodes (FP-LDs) by using electrical injection. The temperature coefficient of the lasing wavelength in GaAs0.97Bi0.03 FP-LDs is reduced to 0.17 nm/K, which is only 45% of that of GaAs FP-LDs.
Keyword (in Japanese) (See Japanese page) 
(in English) GaAsBi / Semiconductor semimetal alloy / Laser diodes / MBE / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 187, LQE2014-44, pp. 87-90, Aug. 2014.
Paper # LQE2014-44 
Date of Issue 2014-08-14 (R, EMD, CPM, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF R2014-40 EMD2014-45 CPM2014-60 OPE2014-70 LQE2014-44 Link to ES Tech. Rep. Archives: EMD2014-45 CPM2014-60 OPE2014-70 LQE2014-44

Conference Information
Committee EMD LQE OPE CPM R  
Conference Date 2014-08-21 - 2014-08-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Otaru Economy Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2014-08-EMD-LQE-OPE-CPM-R 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Realization of GaAs1-xBix laser diodes with low temperature dependence of oscillation wavelength 
Sub Title (in English)  
Keyword(1) GaAsBi  
Keyword(2) Semiconductor semimetal alloy  
Keyword(3) Laser diodes  
Keyword(4) MBE  
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1st Author's Name Takuma Fuyuki  
1st Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
2nd Author's Name Kenji Yoshida  
2nd Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
3rd Author's Name Ryo Yoshioka  
3rd Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
4th Author's Name Masahiro Yoshimoto  
4th Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
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Speaker Author-1 
Date Time 2014-08-22 11:10:00 
Presentation Time 20 minutes 
Registration for LQE 
Paper # R2014-40, EMD2014-45, CPM2014-60, OPE2014-70, LQE2014-44 
Volume (vol) vol.114 
Number (no) no.183(R), no.184(EMD), no.185(CPM), no.186(OPE), no.187(LQE) 
Page pp.87-90 
#Pages
Date of Issue 2014-08-14 (R, EMD, CPM, OPE, LQE) 


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