Paper Abstract and Keywords |
Presentation |
2014-08-22 11:10
Realization of GaAs1-xBix laser diodes with low temperature dependence of oscillation wavelength Takuma Fuyuki, Kenji Yoshida, Ryo Yoshioka, Masahiro Yoshimoto (Kyoto Inst. Tech.) R2014-40 EMD2014-45 CPM2014-60 OPE2014-70 LQE2014-44 Link to ES Tech. Rep. Archives: EMD2014-45 CPM2014-60 OPE2014-70 LQE2014-44 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The coherent epitaxial growth GaAs1-xBix (x = 9.5%) films on GaAs substrate with high optical quality was achieved grown by molecular beam epitaxy. For GaAs0.905Bi0.095 film, photoluminescence (PL) at 1.3 um without PL intensity degradation was observed at room temperature. Lasing oscillation at wavelengths up to 1045 nm at room temperature has been realized from high quality GaAs1-xBix Fabry-Perot laser diodes (FP-LDs) by using electrical injection. The temperature coefficient of the lasing wavelength in GaAs0.97Bi0.03 FP-LDs is reduced to 0.17 nm/K, which is only 45% of that of GaAs FP-LDs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaAsBi / Semiconductor semimetal alloy / Laser diodes / MBE / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 114, no. 187, LQE2014-44, pp. 87-90, Aug. 2014. |
Paper # |
LQE2014-44 |
Date of Issue |
2014-08-14 (R, EMD, CPM, OPE, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
R2014-40 EMD2014-45 CPM2014-60 OPE2014-70 LQE2014-44 Link to ES Tech. Rep. Archives: EMD2014-45 CPM2014-60 OPE2014-70 LQE2014-44 |
Conference Information |
Committee |
EMD LQE OPE CPM R |
Conference Date |
2014-08-21 - 2014-08-22 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Otaru Economy Center |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2014-08-EMD-LQE-OPE-CPM-R |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Realization of GaAs1-xBix laser diodes with low temperature dependence of oscillation wavelength |
Sub Title (in English) |
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Keyword(1) |
GaAsBi |
Keyword(2) |
Semiconductor semimetal alloy |
Keyword(3) |
Laser diodes |
Keyword(4) |
MBE |
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1st Author's Name |
Takuma Fuyuki |
1st Author's Affiliation |
Kyoto Institute of Technology (Kyoto Inst. Tech.) |
2nd Author's Name |
Kenji Yoshida |
2nd Author's Affiliation |
Kyoto Institute of Technology (Kyoto Inst. Tech.) |
3rd Author's Name |
Ryo Yoshioka |
3rd Author's Affiliation |
Kyoto Institute of Technology (Kyoto Inst. Tech.) |
4th Author's Name |
Masahiro Yoshimoto |
4th Author's Affiliation |
Kyoto Institute of Technology (Kyoto Inst. Tech.) |
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Speaker |
Author-1 |
Date Time |
2014-08-22 11:10:00 |
Presentation Time |
20 minutes |
Registration for |
LQE |
Paper # |
R2014-40, EMD2014-45, CPM2014-60, OPE2014-70, LQE2014-44 |
Volume (vol) |
vol.114 |
Number (no) |
no.183(R), no.184(EMD), no.185(CPM), no.186(OPE), no.187(LQE) |
Page |
pp.87-90 |
#Pages |
4 |
Date of Issue |
2014-08-14 (R, EMD, CPM, OPE, LQE) |
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