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Paper Abstract and Keywords
Presentation 2014-10-16 16:00
Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering
Nithi Atthi, Shun-ichiro Ohmi (TokyoTech) SDM2014-87
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, the electrical characteristics of as-deposited HfN high- gate insulator formed by electron-cyclotron-resonance (ECR) plasma sputtering were investigated to make the EOT small such as 0.5 nm or below. The sputtering conditions, particularly deposition gas pressure and sputtering power were optimized to prepare as-deposited HfN film with good electrical properties. It was found that the pre-sputtering process by using argon plasma has influences to the quality of HfN film. By using optimized gas pressure during sputtering of 0.20 Pa, corresponding to Ar/N2 gas flow ratio of 20/8 sccm, 3.6 nm-thick HfN film with maximum capacitance (@ 100 kHz) of 2.6 F/cm2 and small flat-band voltage shift were obtained even without annealing.
Keyword (in Japanese) (See Japanese page) 
(in English) as-deposited / ECR plasma sputtering / high-κ gate insulator / hafnium nitride / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 255, SDM2014-87, pp. 19-22, Oct. 2014.
Paper # SDM2014-87 
Date of Issue 2014-10-09 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2014-10-16 - 2014-10-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2014-10-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering 
Sub Title (in English)  
Keyword(1) as-deposited  
Keyword(2) ECR plasma sputtering  
Keyword(3) high-κ gate insulator  
Keyword(4) hafnium nitride  
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1st Author's Name Nithi Atthi  
1st Author's Affiliation Tokyo Institute of Technology (TokyoTech)
2nd Author's Name Shun-ichiro Ohmi  
2nd Author's Affiliation Tokyo Institute of Technology (TokyoTech)
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Speaker Author-1 
Date Time 2014-10-16 16:00:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2014-87 
Volume (vol) vol.114 
Number (no) no.255 
Page pp.19-22 
#Pages 4 
Date of Issue 2014-10-09 (SDM) 

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