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Paper Abstract and Keywords
Presentation 2014-10-17 11:10
Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD
Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.) SDM2014-91
Abstract (in Japanese) (See Japanese page) 
(in English) Ge and Ge1-xSnx are attractive materials for the next-generation transistors and optical devices.
We achieved to grow Ge and Ge1-xSnx epitaxial films on Ge(001) substrates by metal-organic chemical vapor deposition (MOCVD) using tertiary-butyl-germane (t-C4H9GeH3) and tetraethyl-tin [(C2H5)4Sn].
These precursors are much safer than GeH4 and SnH4.
Thus, we believe that our techniques improve the safety in the deposition process.
In this paper, we investigated Ge and Ge1-xSnx epitaxial films grown in the various deposition conditions.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge / GeSn / Ge1-xSnx / MOCVD / MOVPE / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 255, SDM2014-91, pp. 41-45, Oct. 2014.
Paper # SDM2014-91 
Date of Issue 2014-10-09 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2014-10-16 - 2014-10-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2014-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD 
Sub Title (in English)  
Keyword(1) Ge  
Keyword(2) GeSn  
Keyword(3) Ge1-xSnx  
Keyword(4) MOCVD  
Keyword(5) MOVPE  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kohei Suda  
1st Author's Affiliation Meiji University (Meiji Univ.)
2nd Author's Name Seiya Ishihara  
2nd Author's Affiliation Meiji University (Meiji Univ.)
3rd Author's Name Takahiro Kijima  
3rd Author's Affiliation Meiji University (Meiji Univ.)
4th Author's Name Naomi Sawamoto  
4th Author's Affiliation Meiji University (Meiji Univ.)
5th Author's Name Hideaki Machida  
5th Author's Affiliation Gas-phase Growth Ltd. (Gas-phase Growth)
6th Author's Name Masato Ishikawa  
6th Author's Affiliation Gas-phase Growth Ltd. (Gas-phase Growth)
7th Author's Name Hiroshi Sudoh  
7th Author's Affiliation Gas-phase Growth Ltd. (Gas-phase Growth)
8th Author's Name Yoshio Oshita  
8th Author's Affiliation Toyota Technological Institute (Toyota Technological Inst.)
9th Author's Name Atsushi Ogura  
9th Author's Affiliation Meiji University (Meiji Univ.)
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Speaker Author-1 
Date Time 2014-10-17 11:10:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2014-91 
Volume (vol) vol.114 
Number (no) no.255 
Page pp.41-45 
#Pages 5 
Date of Issue 2014-10-09 (SDM) 

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