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| Presentation | 2014-10-17 11:10 Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.)  SDM2014-91 Link to ES Tech. Rep. Archives: SDM2014-91 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Ge and Ge1-xSnx are attractive materials for the next-generation transistors and optical devices. We achieved to grow Ge and Ge1-xSnx epitaxial films on Ge(001) substrates by metal-organic chemical vapor deposition (MOCVD) using tertiary-butyl-germane (t-C4H9GeH3) and tetraethyl-tin [(C2H5)4Sn]. These precursors are much safer than GeH4 and SnH4. Thus, we believe that our techniques improve the safety in the deposition process. In this paper, we investigated Ge and Ge1-xSnx epitaxial films grown in the various deposition conditions. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ge / GeSn / Ge1-xSnx / MOCVD / MOVPE / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 255, SDM2014-91, pp. 41-45, Oct. 2014. | |
| Paper # | SDM2014-91 | |
| Date of Issue | 2014-10-09 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2014-91 Link to ES Tech. Rep. Archives: SDM2014-91 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2014-10-16 - 2014-10-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2014-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD |
| Sub Title (in English) | |
| Keyword(1) | Ge |
| Keyword(2) | GeSn |
| Keyword(3) | Ge1-xSnx |
| Keyword(4) | MOCVD |
| Keyword(5) | MOVPE |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kohei Suda |
| 1st Author's Affiliation | Meiji University (Meiji Univ.) |
| 2nd Author's Name | Seiya Ishihara |
| 2nd Author's Affiliation | Meiji University (Meiji Univ.) |
| 3rd Author's Name | Takahiro Kijima |
| 3rd Author's Affiliation | Meiji University (Meiji Univ.) |
| 4th Author's Name | Naomi Sawamoto |
| 4th Author's Affiliation | Meiji University (Meiji Univ.) |
| 5th Author's Name | Hideaki Machida |
| 5th Author's Affiliation | Gas-phase Growth Ltd. (Gas-phase Growth) |
| 6th Author's Name | Masato Ishikawa |
| 6th Author's Affiliation | Gas-phase Growth Ltd. (Gas-phase Growth) |
| 7th Author's Name | Hiroshi Sudoh |
| 7th Author's Affiliation | Gas-phase Growth Ltd. (Gas-phase Growth) |
| 8th Author's Name | Yoshio Oshita |
| 8th Author's Affiliation | Toyota Technological Institute (Toyota Technological Inst.) |
| 9th Author's Name | Atsushi Ogura |
| 9th Author's Affiliation | Meiji University (Meiji Univ.) |
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| Speaker | Author-1 |
| Date Time | 2014-10-17 11:10:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2014-91 |
| Volume (vol) | vol.114 |
| Number (no) | no.255 |
| Page | pp.41-45 |
| #Pages | 5 |
| Date of Issue | 2014-10-09 (SDM) |
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