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Paper Abstract and Keywords
Presentation 2014-11-28 13:15
Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu) ED2014-90 CPM2014-147 LQE2014-118 Link to ES Tech. Rep. Archives: ED2014-90 CPM2014-147 LQE2014-118
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the effect of moisture on current collapse of GaN high electron mobility transistor (GaN-HEMT) when using low dielectric constant (low-k) insulator films to reduce the parasitic capacitance of millimeter-wave amplifier monolithic microwave integrated circuits (MMICs). We clarified that current collapse is caused by moisture uptake through the low-k films. Moreover, the moisture resistance of conventional carbon-based low-k films such as benzocyclobutene (BCB) are insufficient to suppress current collapse because of hydrophilic surface. Therefore, we propose methyl silsesquioxane (MSQ)-based low-k films to improve the moisture resistance by focusing on their hydrophobic property due to a large amount of methyl groups. Appling MSQ in GaN-HEMT, the moisture resistance of low-k films was improved, and current collapse due to humidification was successfully reduced. So, improving the moisture resistance with hydrophobic low-k films has a key role in reducing current collapse of GaN-HEMT.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN-HEMT / Millimeter-wave / Current collapse / Low-k insulator films / MSQ / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 336, ED2014-90, pp. 81-84, Nov. 2014.
Paper # ED2014-90 
Date of Issue 2014-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2014-90 CPM2014-147 LQE2014-118 Link to ES Tech. Rep. Archives: ED2014-90 CPM2014-147 LQE2014-118

Conference Information
Committee LQE ED CPM  
Conference Date 2014-11-27 - 2014-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2014-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films 
Sub Title (in English)  
Keyword(1) GaN-HEMT  
Keyword(2) Millimeter-wave  
Keyword(3) Current collapse  
Keyword(4) Low-k insulator films  
Keyword(5) MSQ  
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Keyword(7)  
Keyword(8)  
1st Author's Name Shiro Ozaki  
1st Author's Affiliation Fujitsu Limited (Fujitsu)
2nd Author's Name Kozo Makiyama  
2nd Author's Affiliation Fujitsu Limited (Fujitsu)
3rd Author's Name Toshihiro Ohki  
3rd Author's Affiliation Fujitsu Limited (Fujitsu)
4th Author's Name Yoichi Kamada  
4th Author's Affiliation Fujitsu Limited (Fujitsu)
5th Author's Name Masaru Sato  
5th Author's Affiliation Fujitsu Limited (Fujitsu)
6th Author's Name Yoshitaka Niida  
6th Author's Affiliation Fujitsu Limited (Fujitsu)
7th Author's Name Naoya Okamoto  
7th Author's Affiliation Fujitsu Limited (Fujitsu)
8th Author's Name Satoshi Masuda  
8th Author's Affiliation Fujitsu Limited (Fujitsu)
9th Author's Name Kazukiyo Joshin  
9th Author's Affiliation Fujitsu Limited (Fujitsu)
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Speaker Author-1 
Date Time 2014-11-28 13:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2014-90, CPM2014-147, LQE2014-118 
Volume (vol) vol.114 
Number (no) no.336(ED), no.337(CPM), no.338(LQE) 
Page pp.81-84 
#Pages
Date of Issue 2014-11-20 (ED, CPM, LQE) 


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