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Paper Abstract and Keywords
Presentation 2014-12-12 14:45
Characteristics of Ga-Sn-Oxide thin film
Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-28 SDM2014-123
Abstract (in Japanese) (See Japanese page) 
(in English) Thin films of Ga-Sn-O (GTO) were studied for device applications. Transmittance of GTO thin films with composition ratio at Ga：Sn = 1：3 were higher than 80 %. The sheet resistance was decreased with increasing deposition pressure. On the other hand, transmittance of GTO thin films with composition ratio at Ga:：Sn = 3：1 were decreased with increasing deposition pressure. Oxygen vacancy in GTO films were increased with increasing the deposition pressure. Change in the composition ratio of GTO during deposition process from target to the substrate increases the oxygen vacancy. The characteristics of GaSnO thin films depend on the deposition pressure and composition of target material.
Keyword (in Japanese) (See Japanese page) 
(in English) Oxide semiconductor / GaSnO thin film / RF magnetron sputtering / / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 359, EID2014-28, pp. 79-82, Dec. 2014.
Paper # EID2014-28 
Date of Issue 2014-12-05 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2014-28 SDM2014-123

Conference Information
Committee SDM EID  
Conference Date 2014-12-12 - 2014-12-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si and Si-related Materials and Devices, Display Technology 
Paper Information
Registration To EID 
Conference Code 2014-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characteristics of Ga-Sn-Oxide thin film 
Sub Title (in English)  
Keyword(1) Oxide semiconductor  
Keyword(2) GaSnO thin film  
Keyword(3) RF magnetron sputtering  
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1st Author's Name Yuta Kato  
1st Author's Affiliation Ryukoku University (Ryukoku Univ.)
2nd Author's Name Daiki Nishimoto  
2nd Author's Affiliation Ryukoku University (Ryukoku Univ.)
3rd Author's Name Tokiyoshi Matsuda  
3rd Author's Affiliation Ryukoku University (Ryukoku Univ.)
4th Author's Name Mutsumi Kimura  
4th Author's Affiliation Ryukoku University (Ryukoku Univ.)
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Speaker Author-1 
Date Time 2014-12-12 14:45:00 
Presentation Time 15 minutes 
Registration for EID 
Paper # EID2014-28, SDM2014-123 
Volume (vol) vol.114 
Number (no) no.359(EID), no.360(SDM) 
Page pp.79-82 
#Pages 4 
Date of Issue 2014-12-05 (EID, SDM) 

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