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Paper Abstract and Keywords
Presentation 2014-12-12 10:15
Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs
Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-Around Si nanowire (SiNW) MOSFETs with rectangular cross sections with various width, and investigated the hole mobility of the SiNW MOSFETs using the double Lm method. Measured hole mobilities of SiNW MOSFETs were about 80-140 $rm{cm}^{2}/{rm{Vs}}$ at $n_{rm{inv} = 1×10^{13}$ $rm{cm}^{-2}$. The dependences of the hole mobility on orientations and cross-sectional shapes of nanowires were clarified. The orientation and geometry dependences can be explained by the band structures calculated by tight-binding approximation and the contribution to conduction from the four periphery surfaces around the NW.
Keyword (in Japanese) (See Japanese page) 
(in English) Si Nanowire / MOSFET / Hole Mobility / Effective Mass / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 360, SDM2014-109, pp. 7-11, Dec. 2014.
Paper # SDM2014-109 
Date of Issue 2014-12-05 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2014-14 SDM2014-109

Conference Information
Committee SDM EID  
Conference Date 2014-12-12 - 2014-12-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si and Si-related Materials and Devices, Display Technology 
Paper Information
Registration To SDM 
Conference Code 2014-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs 
Sub Title (in English)  
Keyword(1) Si Nanowire  
Keyword(2) MOSFET  
Keyword(3) Hole Mobility  
Keyword(4) Effective Mass  
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Keyword(6)  
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1st Author's Name Hiroaki Fujihara  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Naoya Morioka  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Hajime Tanaka  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Jun Suda  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
5th Author's Name Tsunenobu Kimoto  
5th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2014-12-12 10:15:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # EID2014-14, SDM2014-109 
Volume (vol) vol.114 
Number (no) no.359(EID), no.360(SDM) 
Page pp.7-11 
#Pages 5 
Date of Issue 2014-12-05 (EID, SDM) 

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