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Paper Abstract and Keywords
Presentation 2014-12-12 16:30
Interface Characterization of 4H-SiC MOSFETs by Single Pulse Id-Vgs Measurements
Kosuke Isono (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba) EID2014-34 SDM2014-129
Abstract (in Japanese) (See Japanese page) 
(in English) SiC MOSFETs have suffered from issues such as threshold voltage instability and low channel mobility due to high interface trap density. Generally, Id-Vgs characteristics of MOSFETs are measured by applying DC voltage to the gate electrode. It has been pointed out that the electron trapping at the interface or oxide defects during electrical measurements brings fluctuations in electrical properties. In this work, we evaluated SiC MOS interface properties by using single pulse Id-Vgs measurements, which enable to measure Id-Vgs characteristics during rise and fall times of the single pulse and evaluate the drain current decrement.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / MOS / interface characterization / single pulse Id-Vgs / / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 360, SDM2014-129, pp. 109-113, Dec. 2014.
Paper # SDM2014-129 
Date of Issue 2014-12-05 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2014-34 SDM2014-129

Conference Information
Committee SDM EID  
Conference Date 2014-12-12 - 2014-12-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si and Si-related Materials and Devices, Display Technology 
Paper Information
Registration To SDM 
Conference Code 2014-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Interface Characterization of 4H-SiC MOSFETs by Single Pulse Id-Vgs Measurements 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) MOS  
Keyword(3) interface characterization  
Keyword(4) single pulse Id-Vgs  
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1st Author's Name Kosuke Isono  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Hiroshi Yano  
2nd Author's Affiliation Nara Institute of Science and Technology/University of Tsukuba (NAIST/Univ. Tsukuba)
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Speaker Author-1 
Date Time 2014-12-12 16:30:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # EID2014-34, SDM2014-129 
Volume (vol) vol.114 
Number (no) no.359(EID), no.360(SDM) 
Page pp.109-113 
#Pages 5 
Date of Issue 2014-12-05 (EID, SDM) 

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