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Paper Abstract and Keywords
Presentation 2014-12-12 17:45
Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM) -- Analyses of Various NiO Surface States Using Ab Initio Calculations --
Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-39 SDM2014-134
Abstract (in Japanese) (See Japanese page) 
(in English) For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created in transition metal oxide (TMO) is important. These days, many studies predict characteristics of conducting path by using first-principles calculations, due to difficulties of direct observation of them. However, many calculations adopt TMO bulk single crystal model, whereas many ReRAM samples used in experiments consist of polycrystalline thin film, which means that the formation of conducting path in grain boundary of TMO polycrystalline thin film is not considered in calculations. In this study, we investigated formative mechanism of conducting path in polycrystalline NiO-ReRAM by comparing surface energy of various orientations by using first-principles calculation. Grain boundary of NiO was suggested to be consisted of (1-10) or (11-2) surfaces. Moreover, calculated density of states for each surfaces showed that band gaps of both of these surfaces are narrower than the band gap of bulk NiO, which suggests that a value of voltage to create conductive path in ReRAM consisting of NiO polycrystalline thin film is lower than that of ReRAMs consisting of other TMO materials.
Keyword (in Japanese) (See Japanese page) 
(in English) Resistive Random Access Memory / ReRAM / First-principles calculation / NiO / Density of surface energy / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 360, SDM2014-134, pp. 135-138, Dec. 2014.
Paper # SDM2014-134 
Date of Issue 2014-12-05 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2014-39 SDM2014-134

Conference Information
Committee SDM EID  
Conference Date 2014-12-12 - 2014-12-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si and Si-related Materials and Devices, Display Technology 
Paper Information
Registration To SDM 
Conference Code 2014-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM) 
Sub Title (in English) Analyses of Various NiO Surface States Using Ab Initio Calculations 
Keyword(1) Resistive Random Access Memory  
Keyword(2) ReRAM  
Keyword(3) First-principles calculation  
Keyword(4) NiO  
Keyword(5) Density of surface energy  
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1st Author's Name Takumi Moriyama  
1st Author's Affiliation Tottori University (Tottori Univ.)
2nd Author's Name Takahiro Yamasaki  
2nd Author's Affiliation Natural Institute for Materials Science (NIMS)
3rd Author's Name Takahisa Ohno  
3rd Author's Affiliation Natural Institute for Materials Science (NIMS)
4th Author's Name Satoru Kishida  
4th Author's Affiliation Tottori University (Tottori Univ.)
5th Author's Name Kentaro Kinoshita  
5th Author's Affiliation Tottori University (Tottori Univ.)
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Speaker Author-1 
Date Time 2014-12-12 17:45:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # EID2014-39, SDM2014-134 
Volume (vol) vol.114 
Number (no) no.359(EID), no.360(SDM) 
Page pp.135-138 
#Pages 4 
Date of Issue 2014-12-05 (EID, SDM) 

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