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Paper Abstract and Keywords
Presentation 2014-12-12 11:00
Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate
Mitsuaki Takeuchi, Kyohei Hayashi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.), Tsutomu Nagayama, Koji Matsuda (Nissin Ion Equipment) EID2014-17 SDM2014-112
Abstract (in Japanese) (See Japanese page) 
(in English) Irradiation damage on Si(100) substrates which were irradiated with C$_{n}$H$_{n}^{+}$($n$=3, 7, 14) and C$_{n}$H$_{2n+1}^{+}$($n$=3,6,12) under conditions of 0.4 -- 3.0 keV/carbon and 1$times$10$^{14}$ carbons/cm$^{2}$ were evaluated by using Rutherford back scattering with channeling (RBS/C) and spectroscopic ellipsometry (SE).
Number of displaced atoms on Si lattice of C$_{n}$H$_{2n+1}^{+}$ estimated by the RBS/C was 40% greater than that of C$_{n}$H$_{n}^{+}$ at similar energy, which agreed with the SE's data.
Keyword (in Japanese) (See Japanese page) 
(in English) hydrocarbon / ion implantation / annealing / Rutherford backscattering / spectro ellipsometry / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 360, SDM2014-112, pp. 21-24, Dec. 2014.
Paper # SDM2014-112 
Date of Issue 2014-12-05 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2014-17 SDM2014-112

Conference Information
Committee SDM EID  
Conference Date 2014-12-12 - 2014-12-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si and Si-related Materials and Devices, Display Technology 
Paper Information
Registration To SDM 
Conference Code 2014-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate 
Sub Title (in English)  
Keyword(1) hydrocarbon  
Keyword(2) ion implantation  
Keyword(3) annealing  
Keyword(4) Rutherford backscattering  
Keyword(5) spectro ellipsometry  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Mitsuaki Takeuchi  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Kyohei Hayashi  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Hiromichi Ryuto  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Gikan H. Takaoka  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
5th Author's Name Tsutomu Nagayama  
5th Author's Affiliation Nissin Ion Equipment Co., Ltd. (Nissin Ion Equipment)
6th Author's Name Koji Matsuda  
6th Author's Affiliation Nissin Ion Equipment Co., Ltd. (Nissin Ion Equipment)
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Speaker Author-1 
Date Time 2014-12-12 11:00:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # EID2014-17, SDM2014-112 
Volume (vol) vol.114 
Number (no) no.359(EID), no.360(SDM) 
Page pp.21-24 
#Pages 4 
Date of Issue 2014-12-05 (EID, SDM) 

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