| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2014-12-19 16:40 High-speed operation of 1.3 um GaAs/InGaAs metamorphic lasers fabricated by using highly-accurate control of crystal lattice relaxation based on in-situ wafer curvature measurement Ryo Nakao, Masakazu Arai, Wataru Kobayashi, Tsuyoshi Yamamoto, Shinji Matsuo (NTT)  OPE2014-150 LQE2014-137 Link to ES Tech. Rep. Archives: OPE2014-150 LQE2014-137 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Metamorphic-growth technology has a potential to overcome the restriction of the lattice matching in the semiconductor device fabrication; this technology enables to construct a high-performance lasers for a data transmission system in telecom and photonics-electronics integrated devices in ICT equipment. In this report, we proposed a new device fabrication method which enables highly-accurate control of crystal lattice relaxation of metamorphic buffer by introducing in-situ wafer curvature measurements during growth. As a result, we successfully achieved a thin InGaAs metamorphic buffer with a low dislocations and small wafer curvature on a GaAs substrate; this buffer enables us to fabricate metamorphic laser diode. We have also confirmed that a prototype laser had a high characteristic temperature (187 K) and a directly modulation of 25 Gbit/s at 1.3 um. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Metamorphic Growth / In-situ Measurement / Direct Modulation / High Temperature Characteristics / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 114, no. 378, LQE2014-137, pp. 59-64, Dec. 2014. | |
| Paper # | LQE2014-137 | |
| Date of Issue | 2014-12-11 (OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | OPE2014-150 LQE2014-137 Link to ES Tech. Rep. Archives: OPE2014-150 LQE2014-137 |
|
| Conference Information | |
| Committee | OPE LQE |
| Conference Date | 2014-12-18 - 2014-12-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan, NTT Atsugi R&D center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Optical passive component (filter, connector, MEMS), Semiconductor lasers, Silicon photonics, etc |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2014-12-OPE-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-speed operation of 1.3 um GaAs/InGaAs metamorphic lasers fabricated by using highly-accurate control of crystal lattice relaxation based on in-situ wafer curvature measurement |
| Sub Title (in English) | |
| Keyword(1) | Metamorphic Growth |
| Keyword(2) | In-situ Measurement |
| Keyword(3) | Direct Modulation |
| Keyword(4) | High Temperature Characteristics |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ryo Nakao |
| 1st Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
| 2nd Author's Name | Masakazu Arai |
| 2nd Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
| 3rd Author's Name | Wataru Kobayashi |
| 3rd Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
| 4th Author's Name | Tsuyoshi Yamamoto |
| 4th Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
| 5th Author's Name | Shinji Matsuo |
| 5th Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
| 6th Author's Name | |
| 6th Author's Affiliation | () |
| 7th Author's Name | |
| 7th Author's Affiliation | () |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2014-12-19 16:40:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | OPE2014-150, LQE2014-137 |
| Volume (vol) | vol.114 |
| Number (no) | no.377(OPE), no.378(LQE) |
| Page | pp.59-64 |
| #Pages | 6 |
| Date of Issue | 2014-12-11 (OPE, LQE) |
[Return to Top Page]