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Paper Abstract and Keywords
Presentation 2015-01-16 10:00
An X-band 310 W High Power GaN HEMT Amplifier
Ken Kikuchi, Makoto Nishihara, Hiroshi Yamamoto, Shinya Mizuno, Fumikazu Yamaki, Takashi Yamamoto (SEDI) ED2014-126 MW2014-190
Abstract (in Japanese) (See Japanese page) 
(in English) A high-output power and broadband GaN high electron mobility transistor (HEMT) has been developed for X-band applications.
The device consists of 2-dice of 14.4-mm gate periphery together with input and output 2-stage impedance transformers.
The device exhibited saturated output power of 310 W with power gain of 10.0 dB over the wide frequency range of 8.5-10.0 GHz, operating at 65 V drain voltage under pulsed condition.
In addition, the highest saturated output power reached 333 W with power gain of 10.2 dB at 9.0 GHz.
This is the highest output power GaN HEMT ever reported for X-band.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN HEMT / power amplifiers / X-band / radar / high output power / broadband / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 392, MW2014-190, pp. 53-58, Jan. 2015.
Paper # MW2014-190 
Date of Issue 2015-01-08 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-126 MW2014-190

Conference Information
Committee MW ED  
Conference Date 2015-01-15 - 2015-01-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies 
Paper Information
Registration To MW 
Conference Code 2015-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) An X-band 310 W High Power GaN HEMT Amplifier 
Sub Title (in English)  
Keyword(1) GaN HEMT  
Keyword(2) power amplifiers  
Keyword(3) X-band  
Keyword(4) radar  
Keyword(5) high output power  
Keyword(6) broadband  
Keyword(7)  
Keyword(8)  
1st Author's Name Ken Kikuchi  
1st Author's Affiliation SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. (SEDI)
2nd Author's Name Makoto Nishihara  
2nd Author's Affiliation SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. (SEDI)
3rd Author's Name Hiroshi Yamamoto  
3rd Author's Affiliation SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. (SEDI)
4th Author's Name Shinya Mizuno  
4th Author's Affiliation SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. (SEDI)
5th Author's Name Fumikazu Yamaki  
5th Author's Affiliation SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. (SEDI)
6th Author's Name Takashi Yamamoto  
6th Author's Affiliation SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. (SEDI)
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Speaker Author-1 
Date Time 2015-01-16 10:00:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # ED2014-126, MW2014-190 
Volume (vol) vol.114 
Number (no) no.391(ED), no.392(MW) 
Page pp.53-58 
#Pages 6 
Date of Issue 2015-01-08 (ED, MW) 

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